參數(shù)資料
型號(hào)： FDB8447L
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 40V N-Channel PowerTrench MOSFET
中文描述： 15 A, 40 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： TO-263AB, 3 PIN
文件頁(yè)數(shù)： 1/6頁(yè)
文件大?。?/td> 347K
代理商： FDB8447L
February 2007
F
M
2007 Fairchild Semiconductor Corporation
FDB8447L Rev.C
www.fairchildsemi.com
1
FDB8447L
40V N-Channel PowerTrench
MOSFET
40V, 50A, 8.5m
Features
Max r
DS(on)
= 8.5m
at V
GS
= 10V, I
D
= 14A
Max r
DS(on)
= 11m
at V
GS
= 4.5V, I
D
= 11A
Fast Switching
RoHS Compliant
General Description
This N-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench
technology to
deliver low r
DS(on)
and optimized BV
DSS
capability to offer
superior performance benefit in the application.
Application
Inverter
Power Supplies
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Ratings
40
±20
50
66
15
100
153
60
3.1
–55 to +150
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited) T
C
= 25°C
-Continuous (Silicon limited)
T
C
= 25°C
(Note 1)
-Continuous
T
A
= 25°C
(Note 1a)
-Pulsed
Drain-Source Avalanche Energy (Note 3)
Power Dissipation T
C
= 25°C
Power Dissipation (Note 1a)
Operating and Storage Junction Temperature Range
I
D
A
E
AS
mJ
P
D
W
T
J
, T
STG
°
C
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case (Note 1)
2.1
°C/W
Thermal Resistance, Junction to Ambient (Note 1a)
40
Device Marking
FDB8447L
Device
FDB8447L
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
D
G
S
D
G
S
TO-263AB
FDB Series
相關(guān)PDF資料
PDF描述
FDB8453LZ N-Channel PowerTrench㈢ MOSFET
FDB8832 N-Channel Logic Level PowerTrench MOSFET 30V, 80A, 2.1mOHM
FDB8860 N-Channel Logic Level PowerTrench㈢ MOSFET 30V, 80A, 2.6mOhm
FDB8870 N-Channel PowerTrench MOSFET 30V, 160A, 3.9mW
FDB8874 N-Channel PowerTrench MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDB8453LZ 功能描述:MOSFET 40V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDB86102LZ 功能描述:MOSFET 100V NCHAN PwrTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDB86135 功能描述:MOSFET PWM PFC COMBO RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDB8832 功能描述:MOSFET 30V N-CH Logic Level PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDB8832_10 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Logic Level PowerTrench?? MOSFET 30V, 80A, 2.1m??
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*