- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375765 > FDB7030L (FAIRCHILD SEMICONDUCTOR CORP) N-Channel Logic Level Enhancement Mode Field Effect Transistor PDF資料下載
參數(shù)資料
| 型號(hào)： | FDB7030L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | 80 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 471K |
| 代理商： | FDB7030L |
FDP7030L Rev.D
1
Typical Electrical Characteristics
(continued)
0
20
40
60
80
0
2
4
6
8
10
Q , GATE CHARGE (nC)
V
G
I = 50A
D
V = 6.0V
24V
12V
1
2
V , DRAIN TO SOURCE VOLTAGE (V)
5
10
20
30
200
500
1000
2000
3000
5000
C
f = 1 MHz
V = 0V
C ss
C s
C s
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
0.1
0.5
1
5
10
30
50
1
2
5
10
20
50
100
300
500
V , DRAIN-SOURCE VOLTAGE (V))
I
D
100μs
1ms
10ms
DC
R Lmt
DSON
10μs
V = 10V
SINGLE PULSE
R = 1.2 C/W
T = 25 °C
GS
o
Figure 9. Maximum Safe Operating Area.
0.01
0.1
1
10
100
1000
0
2000
4000
6000
8000
SINGLE PULSE TIME (ms)
P
SINGLE PULSE
R =1.2° C/W
T = 25°C
JC
Figure 10. Single Pulse Maximum Power
Dissipation.
0.01
0.05
0.1
0.5
1
5
10
50
100
500
1000
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1
t ,TIME (ms)
T
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t /t
2
R (t) = r(t) * R
R = 1.2 °C/W
T - T = P * R JC
P(pk)
t
1
t
2
r
Figure 11. Transient Thermal Response Curve.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDB7042L | N-Channel Logic Level PowerTrench MOSFET(N溝道邏輯電平PowerTrench MOS場效應(yīng)管) |
| FDP7042L | N-Channel Logic Level PowerTrench MOSFET(N溝道邏輯電平PowerTrench MOS場效應(yīng)管) |
| FDB8441 | N-Channel PowerTrench MOSFET |
| FDB8442 | N-Channel PowerTrench MOSFET |
| FDB8443 | N-Channel PowerTrench㈢ MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDB7030L_L86Z | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB7030L_Q | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB7042L | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB7045L | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB7045L_Q | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。