- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375765 > FDB7030L (FAIRCHILD SEMICONDUCTOR CORP) N-Channel Logic Level Enhancement Mode Field Effect Transistor PDF資料下載
參數(shù)資料
| 型號： | FDB7030L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | 80 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 471K |
| 代理商： | FDB7030L |
April 1998
FDP7030L / FDB7030L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
_________________________________________________________________________________
Absolute Maximum Ratings
Symbol
Parameter
T
C
= 25°C unless otherwise noted
FDP7030L
FDB7030L
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
Gate-Source Voltage - Continuous
±20
V
I
D
Drain Current
- Continuous
(Note 1)
100
A
75
- Pulsed
(Note 1)
300
P
D
Total Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
125
W
0.83
W/
°
C
T
J
,T
STG
Operating and Storage Temperature Range
-65 to 175
°C
T
L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
275
°C
THERMAL CHARACTERISTICS
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
1.2
°
C/W
Thermal Resistance, Junction-to-Ambient
62.5
°
C/W
FDP7030L Rev.D
1
100 A, 30 V. R
DS(ON)
= 0.007
@ V
GS
=10 V
R
DS(ON)
= 0.010
@ V
GS
=5 V
.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
High density cell design for extremely low R
DS(ON)
.
175°C maximum junction temperature rating.
These N-Channel logic level enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage
applications such as DC/DC converters and high efficiency
switching circuits where fast switching, low in-line power
loss, and resistance to transients are needed.
S
D
G
1998 Fairchild Semiconductor Corporation
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDB7042L | N-Channel Logic Level PowerTrench MOSFET(N溝道邏輯電平PowerTrench MOS場效應(yīng)管) |
| FDP7042L | N-Channel Logic Level PowerTrench MOSFET(N溝道邏輯電平PowerTrench MOS場效應(yīng)管) |
| FDB8441 | N-Channel PowerTrench MOSFET |
| FDB8442 | N-Channel PowerTrench MOSFET |
| FDB8443 | N-Channel PowerTrench㈢ MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDB7030L_L86Z | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB7030L_Q | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB7042L | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB7045L | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB7045L_Q | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。