參數(shù)資料
型號(hào)： FDB7030L
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel Logic Level Enhancement Mode Field Effect Transistor
中文描述： 80 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： TO-263AB, 3 PIN
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 471K
代理商： FDB7030L
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
DRAIN-SOURCE AVALANCHE RATINGS
(Note 1)
W
DSS
I
AR
OFF CHARACTERISTICS
Single Pulse Drain-Source Avalanche Energy
V
DD
= 15 V, I
D
= 38 A
200
mJ
Maximum Drain-Source Avalanche Current
38
A
BV
DSS
BV
DSS
/
T
J
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA, Referenced to 25
o
C
30
V
Breakdown Voltage Temp. Coefficient
36
mV/
o
C
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
10
μA
T
J
=125 °C
1
mA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
V
GS(th)
/
T
J
R
DS(ON)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
I
D
= 250 μA, Referenced to 25
o
C
1
1.5
2
V
Gate Threshold Voltage Temp.Coefficient
-5
mV/
o
C
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 50 A
0.006
0.007
T
J
= 125°C
0.009
0.011
V
GS
= 5 V, I
D
= 40 A
V
GS
= 10 V, V
DS
= 10 V
V
DS
= 10 V, I
D
= 50 A
0.009
0.01
I
D(on)
g
FS
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 2)
On-State Drain Current
60
A
Forward Transconductance
50
S
V
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
2150
pF
1290
pF
420
pF
t
D(on)
Turn - On Delay Time
V
DD
= 15 V, I
D
= 75 A,
V
GS
= 10 V, R
GEN
= 6
R
GS
= 10
10
20
nS
t
r
t
D(off)
Turn - On Rise Time
160
225
nS
Turn - Off Delay Time
70
95
nS
t
f
Q
g
Q
gs
Q
gd
DRAIN-SOURCE DIODE CHARACTERISTICS
Turn - Off Fall Time
140
195
nS
Total Gate Charge
V
= 12 V
I
D
= 50 A, V
GS
= 4.5 V
35
50
nC
Gate-Source Charge
12
nC
Gate-Drain Charge
18
nC
I
S
I
SM
V
SD
Maximum Continuos Drain-Source Diode Forward Current
(Note 1)
100
A
Maximum Pulsed Drain-Source Diode Forward Current
(Note 2)
300
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 50 A
(Note 2)
1
1.3
V
T
J
= 125°C
0.85
1.1
Notes
1. Calculated continuous current based on maximum allowable junction temperature. Actual maximum continuous current limited by package constraints to 75A.
2. Pulse Test: Pulse Width < 300 μs, Duty Cycle < 2.0%.
FDP7030L Rev.D
1
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