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| 型號(hào)： | ES29BDS800DB-80RTG |
| 廠商： | 優(yōu)先(蘇州)半導(dǎo)體有限公司 |
| 英文描述： | 8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| 中文描述： | 8Mbit（3米x 8/512K × 16），3.0伏的CMOS只，引導(dǎo)扇區(qū)閃存 |
| 文件頁(yè)數(shù)： | 10/50頁(yè) |
| 文件大?。?/td> | 698K |
| 代理商： | ES29BDS800DB-80RTG |
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ESI
10
Rev. 1D January 5, 2006
ES29LV800D
Excel Semiconductor inc.
Operation
CE#
OE#
WE#
RESET#
Addresses
(Note 1)
DQ0
~
DQ7
DQ8~DQ15
BYTE#
= V
IH
BYTE#
= V
IL
Read
L
L
H
H
A
IN
D
OUT
D
OUT
DQ8~DQ14 = High-Z,
DQ15 = A-1
Write
L
H
L
H
A
IN
(Note 3)
(Note 3)
Standby
Vcc+
0.3V
X
X
Vcc+
0.3V
X
High-Z
High-Z
High-Z
Output Disable
Reset
L
H
H
H
X
High-Z
High-Z
X
X
X
L
X
High-Z
High-Z
In-system
Sector Protect
(Note 2)
L
H
L
V
ID
SA,A6=L,
A1=H,A0=L
(Note 3)
X
X
Sector Unprotect
(Note 2)
L
H
L
V
ID
SA,A6=H,
A1=H,A0=L
(Note 3)
X
X
Temporary Sector
Unprotect
X
X
X
V
ID
A
IN
(Note 3)
(Note 3)
High-Z
A9 High-Volt-
age Method
Sector protect
L
V
ID
L
H
SA,A9=V
ID
,
A6=L,
A1=H,A0=L
(Note 3)
(Note 3)
High-Z
Sector unprotect
L
V
ID
L
H
SA,A9=V
ID
,
A6=H,
A1=H,A0=L
Table 1. ES29LV800 Device Bus Operations
Legend
:
L=Logic Low=V
IL
, H=Logic High=V
IH
, V
ID
=11.5-12.5V, X=Don’t Care, SA=Sector Address, A
IN
=Address In, D
IN
=Data In,
D
OUT
=Data Out
Notes
:
1. Addresses are A18:A0 in word mode (BYTE#=V
IH
) , A18:A-1 in byte mode (BYTE#=V
IL
).
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector Pro-
tection and Unprotection” section.
3. D
IN
or D
OUT
as required by command sequence, data polling, or sector protection algorithm.
Description
CE# OE# WE#
A18
to
A12
A11
to
A10
A9
A8
to
A7
A6
A5
to
A2
A1
A0
DQ8~DQ15
DQ7~DQ0
BYTE#
= V
IH
BYTE#
= V
IL
ManufactureID:ESI
L
L
H
X
X
V
ID
X
L
X
L
L
X
X
4Ah
Device ID:
ES29LV800
L
L
H
X
X
V
ID
X
L
X
L
H
22h
X
DAh(T),5Bh(B)
Sector Protection
Verification
L
L
H
SA
X
V
ID
X
L
X
H
L
X
X
01h(protected)
00h(unprotected)
Legend
:
T= Top Boot Block, B = Bottom Boot Block, L=Logic Low=V
IL
, H=Logic High=V
IH
, SA=Sector Address, X = Don’t care
Table 2. Autoselect Codes (A9 High-Voltage Method)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ES29BDS800DB-90RTG | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS800DT-90TGI | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS800E-12RTG | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS800E-90RTG | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS800EB-12TG | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
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