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參數(shù)資料
| 型號(hào)： | ES29BDS800DB-80RTG |
| 廠商： | 優(yōu)先(蘇州)半導(dǎo)體有限公司 |
| 英文描述： | 8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| 中文描述： | 8Mbit（3米x 8/512K × 16），3.0伏的CMOS只，引導(dǎo)扇區(qū)閃存 |
| 文件頁數(shù)： | 50/50頁 |
| 文件大?。?/td> | 698K |
| 代理商： | ES29BDS800DB-80RTG |
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ESI
50
Rev. 1D January 5, 2006
ES29LV800D
Excel Semiconductor inc.
Excel Semiconductor Inc.
1010 Keumkang Hightech Valley, Sangdaewon1-Dong 133-1, Jungwon-Gu, Seongnam-Si, Kyongki-Do, Rep.
of Korea.
Zip Code : 462-807 Tel : +82-31-777-5060 Fax : +82-31-740-3798
/ Homepage : www.excelsemi.com
The
attached
datasheets
are
provided by Excel Semiconductor.inc (ESI). ESI
reserves
the
right
to change the spec-
ifications and products. ESI will answer to your questions about device. If you have any questions, please
contact the
ESI office.
Document Title
8M Flash Memory
Revision History
Revision Number
Data
Items
Rev. 0A
Mar. 15, 2004
Initial Release Version.
Rev. 0B
Apr. 23, 2004
1. The bias condtion of RESET# in Table 1 for A9 high-Voltage method
is changed from V
ID
to H.
2. The bias condition of A9 in Table 1 for A9 high-Voltage method is
added.
3. The typical byte and word program time are changed from 5us/7us to
6us/8us.
4. The dimension of FBGA is changed from 8 x 9mm to 6 x 8mm.
Rev. 1A
Dec. 1, 2004
1. The preliminary is removed from the datasheet.
2. The 44 pin SO is removed.
3. The Icc3 (max) is changed from 5uA to 10uA.
4. The Icc4 (max) is changed from 5uA to 10uA.
5. The Icc5 (max) is changed from 5uA to 10uA.
6. The V
IL(max)
is changed from 0.8V to 0.5V.
7. The overall thickness of FBGA , A (max), is changed from 1.20 to
1.10. Therefore, ball height (A1) and body thickness (A2) also is
changed accordingly.
8. The ball diameter of FBGA, b(min), b(nom), b(max), is changed from
0.25, 0.30, and 0.35 to 0.30, 0.35, and 0.40 respectively.
Rev. 1B
Dec. 13, 2004
1. The arrow from Erase Suspend Read to Read is changed to Sector
Erase.
2. V
LKO
(min), 2.3V is added
Rev. 1C
Sep. 30, 2005
1. Add tVLHT parameter (page 42)
Rev. 1D
Jan. 5, 2006
1. Add RoHS-Compliant Package Option
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ES29BDS800E-90RTG | 8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29DL160D-90RTG | 8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29DS160DB-80RTG | 8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29DS160E-90WC | 8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29DL400DB-70WC | 16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ES29BDS800DB-90RTG | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS800DT-90TGI | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS800E-12RTG | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS800E-90RTG | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS800EB-12TG | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
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