參數(shù)資料
型號(hào)： ES25P80-75IG2Y
廠商： 優(yōu)先(蘇州)半導(dǎo)體有限公司
英文描述： 8Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface
中文描述： 8Mbit的CMOS 3.0伏的閃存與75MHz的SPI總線接口
文件頁(yè)數(shù)： 16/35頁(yè)
文件大?。?/td> 450K
代理商： ES25P80-75IG2Y
ESI
16
Rev. 0D May, 11, 2006
ES25P80
Excel Semiconductor inc.
ADVANCED INFORMATION
Read Identification (RDID)
The Read Identification (RDID) instruction allows the
8-bit manufacturer identification to be read, followed
by two bytes of the device identification.
The manufacturer identification byte is assigned by
JEDEC, and has a value of 4Ah for ESI products.
The device identification is assigned by the device
manufacturer, and indicates the memory type in the
first byte (20h), and the memory capacity of the
device in the second byte (14h).
Any Read Identification (RDID) instruction executed
while an Erase, Program, or Write Status Register
cycle is in progress is not decoded, and has no
effect on the cycle that is in progress.
The device is first selected by driving Chip Select
(CS#) Low. Then, the 8-bit instruction code for the
instruction is shifted in, with each bit being latched in
on SI during the rising edge of SCK.
This is followed by the 24-bit device identification,
stored in the memory, being shifted out on Serial
Data Output (SO), with each bit being shifted out
during the falling edge of Serial Clock (SCK).
The instruction sequence is shown in Figure 11.
Driving CS# high after the Device Identification has
been read at least once terminates the READ_ID
instruction. The Read Identification (RDID) instruc-
tion can also be terminated by driving CS# High at
any time during data output. When Chip Select
(CS#) is driven High, the device is put in the Stand-
by Power mode. Once in the Stand-by Power
mode, the device waits to be selected, so that it can
receive, decode and execute instructions
Manufacturer
Identification
Device Identification
Memory Type
Memory Capacity
4Ah
20h
14h
0
1 2 3 4 5
6
7 8 9 10
28 29 30 31 32 33
34 35 36 37
38 39 40
41 42
43 44 45 46 47
Figure 10. Read Data Bytes at Higher Speed (FAST_READ) Instruction Sequence
SCK
CS#
SI
SO
Data Out 1
MSB
MSB
7
Instruction
High Impedance
24-Bit Address
Data Out 2
Dummy Byte
22 21
23
0 0 0 0 1 0 1 1
2
1
3
0
6
5
7
4
2
1
3
0
6
5
7
4
2
1
3
0
相關(guān)PDF資料
PDF描述
ES29BDS160D-70TG 8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29BDS320DT-70WC 8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29BDS320FB-12RTG 8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29BDS320FT-70WC 8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29BDS400D-70TG 8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
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