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參數(shù)資料
| 型號： | EDE2508ABSE-GE |
| 廠商： | Elpida Memory, Inc. |
| 英文描述： | 256M bits DDR2 SDRAM for HYPER DIMM |
| 中文描述： | 256M比特的超DDR2 SDRAM的內(nèi)存 |
| 文件頁數(shù)： | 21/66頁 |
| 文件大小： | 708K |
| 代理商： | EDE2508ABSE-GE |
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EDE2508ABSE, EDE2516ABSE
Preliminary Data Sheet E0573E30 (Ver. 3.0)
21
Current state
/CS
/RAS /CAS /WE
Address
Command
Operation
Continue burst to end
-> Write recovering
Continue burst to end
-> Write recovering
ILLEGAL
Note
Write
H
×
×
×
×
DESL
L
H
H
H
×
NOP
L
H
L
H
BA, CA, A10 (AP)
READ
1
L
H
L
H
BA, CA, A10 (AP)
READA
ILLEGAL
1
L
H
L
L
BA, CA, A10 (AP)
WRIT
Burst interrupt
1, 4
L
H
L
L
BA, CA, A10 (AP)
WRITA
Burst interrupt
1, 4
L
L
H
H
BA, RA
ACT
ILLEGAL
1
L
L
H
L
BA, A10 (AP)
PRE
ILLEGAL
1
L
L
H
L
A10 (AP)
PALL
ILLEGAL
L
L
L
H
×
REF
ILLEGAL
L
L
L
H
×
SELF
ILLEGAL
L
L
L
L
BA, MRS-OPCODE
MRS
ILLEGAL
L
L
L
L
BA, EMRS-OPCODE
EMRS
ILLEGAL
Read with
H
×
×
×
×
DESL
Continue burst to end -> Precharging
auto precharge
L
H
H
H
×
NOP
Continue burst to end -> Precharging
L
H
L
H
BA, CA, A10 (AP)
READ
ILLEGAL
1
L
H
L
H
BA, CA, A10 (AP)
READA
ILLEGAL
1
L
H
L
L
BA, CA, A10 (AP)
WRIT
ILLEGAL
1
L
H
L
L
BA, CA, A10 (AP)
WRITA
ILLEGAL
1
L
L
H
H
BA, RA
ACT
ILLEGAL
1
L
L
H
L
BA, A10 (AP)
PRE
ILLEGAL
1
L
L
H
L
A10 (AP)
PALL
ILLEGAL
L
L
L
H
×
REF
ILLEGAL
L
L
L
H
×
SELF
ILLEGAL
L
L
L
L
BA, MRS-OPCODE
MRS
ILLEGAL
Write with auto
Precharge
L
L
L
L
BA, EMRS-OPCODE
EMRS
ILLEGAL
Continue burst to end
->Write recovering with auto precharge
Continue burst to end
->Write recovering with auto precharge
ILLEGAL
H
×
×
×
×
DESL
L
H
H
H
×
NOP
L
H
L
H
BA, CA, A10 (AP)
READ
1
L
H
L
H
BA, CA, A10 (AP)
READA
ILLEGAL
1
L
H
L
L
BA, CA, A10 (AP)
WRIT
ILLEGAL
1
L
H
L
L
BA, CA, A10 (AP)
WRITA
ILLEGAL
1
L
L
H
H
BA, RA
ACT
ILLEGAL
1
L
L
H
L
BA, A10 (AP)
PRE
ILLEGAL
1
L
L
H
L
A10 (AP)
PALL
ILLEGAL
L
L
L
H
×
REF
ILLEGAL
L
L
L
H
×
SELF
ILLEGAL
L
L
L
L
BA, MRS-OPCODE
MRS
ILLEGAL
L
L
L
L
BA, EMRS-OPCODE
EMRS
ILLEGAL
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EDE2516ABSE-GE | 256M bits DDR2 SDRAM for HYPER DIMM |
| EDE2508ABSE-GE-E | 256M bits DDR2 SDRAM for HYPER DIMM |
| EDE2516ABSE | 256M bits DDR2 SDRAM |
| EDE2516ABSE-GE-E | 256M bits DDR2 SDRAM for HYPER DIMM |
| EDE5104ABSE | 512M bits DDR2 SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EDE2508ABSE-GE-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits DDR2 SDRAM for HYPER DIMM |
| EDE2508ACSE | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits DDR2 SDRAM |
| EDE2508ACSE-5C-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits DDR2 SDRAM |
| EDE2508ACSE-6E-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits DDR2 SDRAM |
| EDE2508ACSE-8E-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits DDR2 SDRAM |
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