參數(shù)資料
型號(hào)： EBE11ED8AGFA-4A-E
廠商： ELPIDA MEMORY INC
元件分類： DRAM
英文描述： 1GB Unbuffered DDR2 SDRAM DIMM (128M words x 72 bits, 2 Ranks)
中文描述： 128M X 72 DDR DRAM MODULE, 0.6 ns, DMA240
封裝： ROHS COMPLIANT, DIMM-240
文件頁(yè)數(shù)： 14/22頁(yè)
文件大?。?/td> 175K
代理商： EBE11ED8AGFA-4A-E
EBE11ED8ABFA
Data Sheet E0379E40 (Ver. 4.0)
14
ODT DC Electrical Characteristics (TC = 0 to +85
°
C, VDD, VDDQ = 1.8V
±
0.1V)
(DDR2 SDRAM Component Specification)
Parameter
Symbol
min.
typ.
max.
Unit
Note
Rtt effective impedance value for EMRS (A6, A2)
=
0, 1
;
75
Rtt1(eff)
60
75
90
1
Rtt effective impedance value for EMRS (A6, A2)
=
1, 0
;
150
Rtt2(eff)
120
150
180
1
Deviation of VM with respect to VDDQ/2
VM
3.75
+
3.75
%
1
Note: 1. Test condition for Rtt measurements.
Measurement Definition for Rtt(eff)
Apply VIH (AC) and VIL (AC) to test pin separately, then measure current I(VIH(AC)) and I(VIL(AC)) respectively.
VIH(AC), and VDDQ values defined in SSTL
_
18.
VIH(AC)
VIL(AC)
I(VIH(AC))
I(VIL(AC))
Rtt(eff) =
Measurement Definition for
VM
Measure voltage (VM) at test pin (midpoint) with no load.
2
×
VM
VDDQ
VM =
×
100%
1
OCD Default Characteristics (TC = 0 to +85
°
C, VDD, VDDQ = 1.8V
±
0.1V)
(DDR2 SDRAM Component Specification)
Parameter
min.
typ.
max.
Unit
Notes
Output impedance
12.6
18
23.4
1
Pull-up and pull-down mismatch
0
4
1, 2
Output slew rate
1.5
4.5
V/ns
3, 4
Notes: 1. Impedance measurement condition for output source DC current: VDDQ = 1.7V; VOUT = 1420mV;
(VOUT
VDDQ)/IOH must be less than 23.4
for values of VOUT between VDDQ and VDDQ
280mV.
Impedance measurement condition for output sink DC current: VDDQ = 1.7V; VOUT = 280mV;
VOUT/IOL must be less than 23.4
for values of VOUT between 0V and 280mV.
2. Mismatch is absolute value between pull up and pull down, both are measured at same temperature and
voltage.
3. Slew rate measured from VIL(AC) to VIH(AC).
4. The absolute value of the slew rate as measured from DC to DC is equal to or greater than the slew rate
as measured from AC to AC. This is guaranteed by design and characterization.
Pin Capacitance (TA = 25°C, VDD = 1.8V ± 0.1V)
(DDR2 SDRAM Component Specification)
Parameter
Symbol
Pins
Address, /RAS, /CAS,
/WE, /CS, CKE, ODT
CK, /CK
max.
min.
Unit
Note
Input capacitance
CI1
1
2
pF
Input capacitance
Data and DQS input/output
capacitance
CI2
1
2
pF
CO
DQ, DQS, /DQS, DM, CB
3
4
pF
相關(guān)PDF資料
PDF描述
EBE11ED8AGFA-5C-E 1GB Unbuffered DDR2 SDRAM DIMM (128M words x 72 bits, 2 Ranks)
EBE11ED8AGFA-6E-E 1GB Unbuffered DDR2 SDRAM DIMM (128M words x 72 bits, 2 Ranks)
EBE11ED8ABFA-5C-E 1GB Unbuffered DDR2 SDRAM DIMM (128M words x 72 bits, 2 Ranks)
EBE11ED8AEFA Circular Connector; No. of Contacts:5; Series:MS27466; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:15; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No
EBE11ED8AEFA-4A-E Circular Connector; No. of Contacts:37; Series:MS27466; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:15; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EBE11ED8AGFA-5C-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB Unbuffered DDR2 SDRAM DIMM (128M words x 72 bits, 2 Ranks)
EBE11ED8AGFA-6E-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB Unbuffered DDR2 SDRAM DIMM (128M words x 72 bits, 2 Ranks)
EBE11ED8AGWA 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB Unbuffered DDR2 SDRAM DIMM
EBE11ED8AGWA-5C-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB Unbuffered DDR2 SDRAM DIMM
EBE11ED8AGWA-6E-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB Unbuffered DDR2 SDRAM DIMM
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