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參數(shù)資料
| 型號： | EBE11ED8AGFA-4A-E |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | 1GB Unbuffered DDR2 SDRAM DIMM (128M words x 72 bits, 2 Ranks) |
| 中文描述： | 128M X 72 DDR DRAM MODULE, 0.6 ns, DMA240 |
| 封裝： | ROHS COMPLIANT, DIMM-240 |
| 文件頁數(shù)： | 13/22頁 |
| 文件大?。?/td> | 175K |
| 代理商： | EBE11ED8AGFA-4A-E |
EBE11ED8ABFA
Data Sheet E0379E40 (Ver. 4.0)
13
DC Characteristics 2 (TC = 0 to +85°C, VDD, VDDQ = 1.8V ± 0.1V)
(DDR2 SDRAM Component Specification)
Parameter
Symbol
Value
Unit
Notes
Input leakage current
ILI
2
μ
A
VDD
≥
VIN
≥
VSS
Output leakage current
Minimum required output pull-up under AC
test load
Maximum required output pull-down under
AC test load
Output timing measurement reference level VOTR
ILO
5
μ
A
VDDQ
≥
VOUT
≥
VSS
VOH
VTT + 0.603
V
5
VOL
VTT – 0.603
V
5
0.5
×
VDDQ
V
1
Output minimum sink DC current
IOL
+13.4
mA
3, 4, 5
Output minimum source DC current
IOH
-13.4
mA
2, 4, 5
Notes: 1. The VDDQ of the device under test is referenced.
2. VDDQ = 1.7V; VOUT = 1.42V.
3. VDDQ = 1.7V; VOUT = 0.28V.
4. The DC value of VREF applied to the receiving device is expected to be set to VTT.
5. After OCD calibration to 18
at TA = 25
°
C, VDD = VDDQ = 1.8V.
DC Characteristics 3 (TC = 0 to +85
°
C, VDD, VDDQ = 1.8V
±
0.1V)
(DDR2 SDRAM Component Specification)
Parameter
Symbol
min.
max.
Unit
Notes
AC differential input voltage
VID (AC)
0.5
VDDQ
+
0.6
0.5
×
VDDQ
+
0.175
0.5
×
VDDQ
+
0.125
V
1
AC differential cross point voltage
VIX (AC)
0.5
×
VDDQ
0.175
0.5
×
VDDQ
0.125
V
2
AC differential cross point voltage
VOX (AC)
V
3
Notes: 1. VID(AC) specifies the input differential voltage |VTR -VCP| required for switching, where VTR is the true
input signal (such as CK, DQS, LDQS or UDQS) and VCP is the complementary input signal (such as
/CK, /DQS, /LDQS or /UDQS). The minimum value is equal to VIH(AC)
VIL(AC).
2. The typical value of VIX(AC) is expected to be about 0.5
×
VDDQ of the transmitting device and VIX(AC)
is expected to track variations in VDDQ . VIX(AC) indicates the voltage at which differential input signals
must cross.
3. The typical value of VOX(AC) is expected to be about 0.5
×
VDDQ of the transmitting device and
VOX(AC) is expected to track variations in VDDQ . VOX(AC) indicates the voltage at which differential
output signals must cross.
Crossing point
VSSQ
VTR
VCP
VID
VIX or VOX
VDDQ
Differential Signal Levels*
1, 2
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PDF描述 |
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| EBE11ED8AGFA-5C-E | 1GB Unbuffered DDR2 SDRAM DIMM (128M words x 72 bits, 2 Ranks) |
| EBE11ED8AGFA-6E-E | 1GB Unbuffered DDR2 SDRAM DIMM (128M words x 72 bits, 2 Ranks) |
| EBE11ED8ABFA-5C-E | 1GB Unbuffered DDR2 SDRAM DIMM (128M words x 72 bits, 2 Ranks) |
| EBE11ED8AEFA | Circular Connector; No. of Contacts:5; Series:MS27466; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:15; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No |
| EBE11ED8AEFA-4A-E | Circular Connector; No. of Contacts:37; Series:MS27466; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:15; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| EBE11ED8AGFA-5C-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB Unbuffered DDR2 SDRAM DIMM (128M words x 72 bits, 2 Ranks) |
| EBE11ED8AGFA-6E-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB Unbuffered DDR2 SDRAM DIMM (128M words x 72 bits, 2 Ranks) |
| EBE11ED8AGWA | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB Unbuffered DDR2 SDRAM DIMM |
| EBE11ED8AGWA-5C-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB Unbuffered DDR2 SDRAM DIMM |
| EBE11ED8AGWA-6E-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB Unbuffered DDR2 SDRAM DIMM |
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