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參數(shù)資料
| 型號(hào)： | E28F400BX-B120 |
| 廠商： | INTEL CORP |
| 元件分類： | PROM |
| 英文描述： | 4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| 中文描述： | 256K X 16 FLASH 12V PROM, 120 ns, PDSO56 |
| 封裝： | 20 X 14 MM, TSOP-56 |
| 文件頁(yè)數(shù)： | 44/50頁(yè) |
| 文件大?。?/td> | 449K |
| 代理商： | E28F400BX-B120 |
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28F400BX-TB 28F004BX-TB
EXTENDED TEMPERATURE OPERATION
AC CHARACTERISTICSCE -CONTROLLED WRITE OPERATIONS(1 9) (Continued)
Versions
T28F400BX-80(10)
T28F004BX-80(10)
Unit
Symbol
Parameter
Notes
Min
Max
tEHQV2
Duration of Erase Operation (Boot)
2 5 6
04
s
tEHQV3
Duration of Erase Operation (Parameter)
2 5
04
s
tEHQV4
Duration of Erase Operation (Main)
2 5
07
s
tQVVL
tVPH
VPP Hold from Valid SRD
5 8
0
ns
tQVPH
tPHH
RP
VHH Hold from Valid SRD
6 8
0
ns
tPHBR
Boot-Block Relock Delay
7
100
ns
tIR
Input Rise Time
10
ns
tIF
Input Fall Time
10
ns
NOTES
1 Chip-Enable Controlled Writes Write operations are driven by the valid combination of CE
and WE
in systems where
CE
defines the write pulse-width (within a longer WE
timing waveform) all set-up hold and inactive WE
times
should be measured relative to the CE
waveform
2 3 4 5 6 7 8 Refer to AC Characteristics for WE -Controlled Write Operations
9 Read timing characteristics during write and erase operations are the same as during read-only operations Refer to AC
Characteristics during Read Mode
10 See Standard Test Configuration
ORDERING INFORMATION
290451 – 18
VALID COMBINATIONS
E28F400BX-T60
PA28F400BX-T60
E28F400BX-B60
PA28F400BX-B60
E28F400BX-T80
PA28F400BX-T80
TE28F400BX-T80
TB28F400BX-T80
E28F400BX-B80
PA28F400BX-B80
TE28F400BX-B80
TB28F400BX-B80
E28F400BX-T120
PA28F400BX-T120
E28F400BX-B120
PA28F400BX-B120
290451 – 30
VALID COMBINATIONS
E28F004BX-T60
E28F004BX-T80
TE28F004BX-T80
E28F004BX-T120
E28F004BX-B60
E28F004BX-B80
TE28F004BX-B80
E28F004BX-B120
49
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| E28F400BX-B60 | ACTUATOR, SWITCH, ROUND, MOMENTARY; Approval Bodies:BEAB, VDE, UL, CSA; Diameter, external:29mm; IP rating:65; Operations, mechanical No. of:1000000; Temp, op. max:85(degree C); Temp, op. min:-20(degree C) RoHS Compliant: Yes |
| E28F400BX-B80 | 4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F400BX-T120 | 4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F004BX-T120 | OSC 5V SMT PLAS 14X9 CMOS |
| E2SAA10-30.000MTR | QUARTZ CRYSTAL RESONATOR, 30 MHz |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| E28F400BX-B60 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F400BX-B80 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F400BX-T120 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F400BX-T60 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F400BX-T80 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
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