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參數(shù)資料
| 型號： | E28F400BX-B120 |
| 廠商： | INTEL CORP |
| 元件分類： | PROM |
| 英文描述： | 4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| 中文描述： | 256K X 16 FLASH 12V PROM, 120 ns, PDSO56 |
| 封裝： | 20 X 14 MM, TSOP-56 |
| 文件頁數(shù)： | 21/50頁 |
| 文件大小： | 449K |
| 代理商： | E28F400BX-B120 |
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28F400BX-TB 28F004BX-TB
290451 – 12
Bus
Command
Comments
Operation
Write
Erase
Data e B0H
Suspend
Read
Status Register Data
Toggle OE
or CE
to
update Status Register
Standby
Check SR7
1 e Ready
Standby
Check SR6
1 e Suspended
Write
Read Array
Data e FFH
Read
Read array data from block
other than that being
erased
Write
Erase Resume
Data e D0H
Figure 15 Erase SuspendResume Flowchart
45 Power Consumption
451 ACTIVE POWER
With CE
at a logic-low level and RP
at a logic-
high level the device is placed in the active mode
The device ICC current is a maximum 60 mA at
10 MHz with TTL input signals
452 AUTOMATIC POWER SAVINGS
Automatic Power Savings (APS) is a low pwer fea-
ture during active mode of operation The 4-Mbit
family of products incorporate Power Reduction
Control (PRC) circuitry which basically allows the de-
vice to put itself into a low current state when it is
not being accessed After data is read from the
memory array PRC logic controls the device’s pow-
er consumption by entering the APS mode where
maximum ICC current is 3 mA and typical ICC current
is 1 mA The device stays in this static state with
outputs valid until a new location is read
453 STANDBY POWER
With CE
at a logic-high level (VIH) and the CUI in
read mode the memory is placed in standby mode
where the maximum ICC standby current is 100 mA
with CMOS input signals The standby operation dis-
ables much of the device’s circuitry and substantially
reduces device power consumption The outputs
(DQ 015 or DQ 07 ) are placed in a high-imped-
ance state independent of the status of the OE
signal When the 4-Mbit boot block flash family is
deselected during erase or program functions the
devices will continue to perform the erase or pro-
gram function and consume program or erase active
power until program or erase is completed
28
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| E28F400BX-B60 | ACTUATOR, SWITCH, ROUND, MOMENTARY; Approval Bodies:BEAB, VDE, UL, CSA; Diameter, external:29mm; IP rating:65; Operations, mechanical No. of:1000000; Temp, op. max:85(degree C); Temp, op. min:-20(degree C) RoHS Compliant: Yes |
| E28F400BX-B80 | 4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F400BX-T120 | 4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F004BX-T120 | OSC 5V SMT PLAS 14X9 CMOS |
| E2SAA10-30.000MTR | QUARTZ CRYSTAL RESONATOR, 30 MHz |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| E28F400BX-B60 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F400BX-B80 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F400BX-T120 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F400BX-T60 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F400BX-T80 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
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