| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
|---|---|---|---|---|
| SI9433BDY-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 20V 8-SOIC | 2,500 | 2,500:$0.27695 5,000:$0.25785 12,500:$0.24830 25,000:$0.23875 62,500:$0.23493 125,000:$0.22920 |
| SI3477DV-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 12V 6-TSOP | 3,837 | 1:$0.84000 25:$0.64600 100:$0.57000 250:$0.49400 500:$0.41800 1,000:$0.33250 |
| SI3477DV-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 12V 6-TSOP | 3,000 | 3,000:$0.27550 6,000:$0.25650 15,000:$0.24700 30,000:$0.23750 75,000:$0.23370 150,000:$0.22800 |
| SIA433EDJ-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 20V SC-70-6 | 5,927 | 1:$0.79000 25:$0.61200 100:$0.54000 250:$0.46800 500:$0.39600 1,000:$0.31500 |
| SIA433EDJ-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 20V SC-70-6 | 3,000 | 3,000:$0.26100 6,000:$0.24300 15,000:$0.23400 30,000:$0.22500 75,000:$0.22140 150,000:$0.21600 |
| SI5424DC-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 1206-8 | 4,538 | 1:$0.71000 25:$0.55080 100:$0.48600 250:$0.42120 500:$0.35640 1,000:$0.28350 |
| SI5424DC-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 1206-8 | 4,538 | 1:$0.71000 25:$0.55080 100:$0.48600 250:$0.42120 500:$0.35640 1,000:$0.28350 |
| SI5424DC-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 1206-8 | 3,000 | 3,000:$0.25467 |
| SI1499DH-T1-GE3 | Vishay Siliconix | MOSFET P-CH 8V SC-70-6 | 8,442 | 1:$0.75000 25:$0.57800 100:$0.51000 250:$0.44200 500:$0.37400 1,000:$0.29750 |
| SI1499DH-T1-GE3 | Vishay Siliconix | MOSFET P-CH 8V SC-70-6 | 8,442 | 1:$0.75000 25:$0.57800 100:$0.51000 250:$0.44200 500:$0.37400 1,000:$0.29750 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET P 通道，金屬氧化物 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 20V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 4.5A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 40 毫歐 @ 6.2A，4.5V |
| Id 時的 Vgs(th)（最大）: | 1.5V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 14nC @ 4.5V |
| 輸入電容 (Ciss) @ Vds: | - |
| 功率 - 最大: | 1.3W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 8-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝: | 8-SOICN |
| 包裝: | 帶卷 (TR) |