元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
---|---|---|---|---|
SI3477DV-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 12V 6-TSOP | 3,000 | 3,000:$0.27550 6,000:$0.25650 15,000:$0.24700 30,000:$0.23750 75,000:$0.23370 150,000:$0.22800 |
SIA433EDJ-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 20V SC-70-6 | 5,927 | 1:$0.79000 25:$0.61200 100:$0.54000 250:$0.46800 500:$0.39600 1,000:$0.31500 |
SIA433EDJ-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 20V SC-70-6 | 3,000 | 3,000:$0.26100 6,000:$0.24300 15,000:$0.23400 30,000:$0.22500 75,000:$0.22140 150,000:$0.21600 |
SI5424DC-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 1206-8 | 4,538 | 1:$0.71000 25:$0.55080 100:$0.48600 250:$0.42120 500:$0.35640 1,000:$0.28350 |
SI5424DC-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 1206-8 | 4,538 | 1:$0.71000 25:$0.55080 100:$0.48600 250:$0.42120 500:$0.35640 1,000:$0.28350 |
SI5424DC-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 1206-8 | 3,000 | 3,000:$0.25467 |
SI1499DH-T1-GE3 | Vishay Siliconix | MOSFET P-CH 8V SC-70-6 | 8,442 | 1:$0.75000 25:$0.57800 100:$0.51000 250:$0.44200 500:$0.37400 1,000:$0.29750 |
SI1499DH-T1-GE3 | Vishay Siliconix | MOSFET P-CH 8V SC-70-6 | 8,442 | 1:$0.75000 25:$0.57800 100:$0.51000 250:$0.44200 500:$0.37400 1,000:$0.29750 |
類別: | 分離式半導體產(chǎn)品 |
---|---|
FET 型: | MOSFET P 通道,金屬氧化物 |
FET 特點: | 邏輯電平門 |
漏極至源極電壓(Vdss): | 12V |
電流 - 連續(xù)漏極(Id) @ 25° C: | 8A |
開態(tài)Rds(最大)@ Id, Vgs @ 25° C: | 17.5 毫歐 @ 9A,4.5V |
Id 時的 Vgs(th)(最大): | 1V @ 250µA |
閘電荷(Qg) @ Vgs: | 90nC @ 10V |
輸入電容 (Ciss) @ Vds: | 2600pF @ 6V |
功率 - 最大: | 4.2W |
安裝類型: | 表面貼裝 |
封裝/外殼: | 6-TSOP(0.065",1.65mm 寬) |
供應商設備封裝: | 6-TSOP |
包裝: | 帶卷 (TR) |