| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| SI5424DC-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 1206-8 | 4,538 | 1:$0.71000 25:$0.55080 100:$0.48600 250:$0.42120 500:$0.35640 1,000:$0.28350 |
| SI5424DC-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 1206-8 | 3,000 | 3,000:$0.25467 |
| SI1499DH-T1-GE3 | Vishay Siliconix | MOSFET P-CH 8V SC-70-6 | 8,442 | 1:$0.75000 25:$0.57800 100:$0.51000 250:$0.44200 500:$0.37400 1,000:$0.29750 |
| SI1499DH-T1-GE3 | Vishay Siliconix | MOSFET P-CH 8V SC-70-6 | 8,442 | 1:$0.75000 25:$0.57800 100:$0.51000 250:$0.44200 500:$0.37400 1,000:$0.29750 |
| 類(lèi)別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 邏輯電平門(mén) |
| 漏極至源極電壓(Vdss): | 30V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 6A |
| 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 24 毫歐 @ 4.8A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 2.3V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 32nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 950pF @ 15V |
| 功率 - 最大: | 6.25W |
| 安裝類(lèi)型: | 表面貼裝 |
| 封裝/外殼: | 8-SMD，扁平引線 |
| 供應(yīng)商設(shè)備封裝: | 1206-8 ChipFET? |
| 包裝: | 剪切帶 (CT) |