| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| SI5913DC-T1-GE3 | Vishay Siliconix | MOSFET P-CH 1206-8 | 0 | 3,000:$0.20925 6,000:$0.19575 15,000:$0.18225 30,000:$0.17213 75,000:$0.16875 150,000:$0.16200 |
| SI3805DV-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 20V 6-TSOP | 695 | 1:$0.74000 25:$0.51960 100:$0.44550 250:$0.38476 500:$0.33076 1,000:$0.25650 |
| SI5402BDC-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 1206-8 | 0 | 3,000:$0.27200 |
| SI3805DV-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 20V 6-TSOP | 695 | 1:$0.74000 25:$0.51960 100:$0.44550 250:$0.38476 500:$0.33076 1,000:$0.25650 |
| SI4620DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 8-SOIC | 350 | 1:$0.74000 25:$0.57120 100:$0.50400 250:$0.43680 500:$0.36960 1,000:$0.29400 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET P 通道，金屬氧化物 |
| FET 特點(diǎn): | 二極管（隔離式） |
| 漏極至源極電壓(Vdss): | 20V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 4A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 84 毫歐 @ 3.7A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 1.5V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 12nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 330pF @ 10V |
| 功率 - 最大: | 3.1W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 8-SMD，扁平引線 |
| 供應(yīng)商設(shè)備封裝: | 1206-8 ChipFET? |
| 包裝: | 帶卷 (TR) |