元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
---|---|---|---|---|
IPI200N25N3 G | Infineon Technologies | MOSFET N-CH 250V 64A TO262-3 | 381 | 1:$8.46000 10:$7.61700 25:$6.94040 100:$6.26320 250:$5.75536 500:$5.24752 1,000:$4.57043 2,500:$4.40115 5,000:$4.23188 |
IPP200N25N3 G | Infineon Technologies | MOSFET N-CH 250V 64A TO220-3 | 338 | 1:$8.46000 10:$7.61700 25:$6.94040 100:$6.26320 250:$5.75536 500:$5.24752 1,000:$4.57043 2,500:$4.40115 5,000:$4.23188 |
類別: | 分離式半導(dǎo)體產(chǎn)品 |
---|---|
FET 型: | MOSFET N 通道,金屬氧化物 |
FET 特點(diǎn): | 邏輯電平門 |
漏極至源極電壓(Vdss): | 250V |
電流 - 連續(xù)漏極(Id) @ 25° C: | 64A |
開態(tài)Rds(最大)@ Id, Vgs @ 25° C: | 20 毫歐 @ 64A,10V |
Id 時(shí)的 Vgs(th)(最大): | 4V @ 270µA |
閘電荷(Qg) @ Vgs: | 86nC @ 10V |
輸入電容 (Ciss) @ Vds: | 7100pF @ 100V |
功率 - 最大: | 300W |
安裝類型: | 通孔 |
封裝/外殼: | TO-262-3,長(zhǎng)引線,I²Pak,TO-262AA |
供應(yīng)商設(shè)備封裝: | PG-TO262-3 |
包裝: | 管件 |