| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| SI5486DU-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V PPAK CHIPFET | 4,819 | 1:$1.29000 25:$1.02000 100:$0.91800 250:$0.79900 500:$0.71400 1,000:$0.56100 |
| SI4154DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 40V 8-SOIC | 7,787 | 1:$1.63000 25:$1.29000 100:$1.16100 250:$1.01052 500:$0.90300 1,000:$0.70950 |
| SI4154DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 40V 8-SOIC | 7,787 | 1:$1.63000 25:$1.29000 100:$1.16100 250:$1.01052 500:$0.90300 1,000:$0.70950 |
| SI4154DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 40V 8-SOIC | 7,500 | 2,500:$0.60200 5,000:$0.57190 12,500:$0.54825 25,000:$0.53320 62,500:$0.51600 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 20V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 12A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 15 毫歐 @ 7.7A，4.5V |
| Id 時的 Vgs(th)（最大）: | 1V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 54nC @ 8V |
| 輸入電容 (Ciss) @ Vds: | 2100pF @ 10V |
| 功率 - 最大: | 31W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 8-PowerPak? CHIPFET? |
| 供應商設備封裝: | 8-PowerPak? ChipFet |
| 包裝: | 剪切帶 (CT) |