參數(shù)資料
型號: DT410EL
廠商: DIODES INC
元件分類: 功率晶體管
英文描述: N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
中文描述: 2.1 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC PACKAGE-4
文件頁數(shù): 4/4頁
文件大?。?/td> 73K
代理商: DT410EL
D
S
11601 Rev.C-4
4 of 4
DT410EL
0.1
1
10
20
0.1
1
10
100
I
D
V
Fig. 5, Maximum Safe Operating Area
, DRAIN-SOURCE VOLTAGE (V)
R
LMT
DSON
10 s
100 s
1ms
10ms
1s
10s
dc
V
= 10V
GS
SINGLE PULSE
R
= 42 C
QJA
T = 25 C
0.001
0.01
0.1
1.0
0.0001
0.001
0.01
0.1
1.0
10
100
r
T
t , SQUARE WAVE PULSE DURATION (seconds)
Fig. 6, Typical Normalized Transient Thermal Impedance Curves
1000
3000
Single Pulse
0.01
0.05
0.1
0.2
0.02
D = 0.5
t
1
t
2
P
(pk)
T - T = P
Duty Cycle, D = t /t
b R
(t)
PK
QJA
1 2
R
R
(t) = r(t) b R
= See Note 1c
QJA
QJA
QJA
Remark: Thermal characterization performed under conditions
described in note 1c. Transient thermal response will change
depending on the circuit board design.
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