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參數(shù)資料
| 型號： | DT410EL |
| 廠商： | DIODES INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 中文描述： | 2.1 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 73K |
| 代理商： | DT410EL |
D
S
11601 Rev.C-4
2 of 4
DT410EL
Electrical Characteristics
25°C unless otherwise specified
Notes:
2. Pulse Test: Pulse width
l
300μs, duty cycle
l
2.0%.
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
DRAIN-SOURCE AVALANCHE RATINGS (Note 2)
Single Pulse Drain-Source Avalanche
Energy
Maximum Drain-Source Avalanche
Current
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
W
DSS
—
—
15
mJ
V
DD
= 50V, I
D
= 10A
I
AR
—
—
10
A
BV
DSS
100
—
—
—
—
—
—
1.0
10
V
V
GS
= 0V, I
D
= 250μA
T
j
=55°C
I
DSS
μA
VDS = 80V, V
GS
= 0V
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
I
GSSF
I
GSSR
—
—
—
—
100
-100
nA
nA
V
GS
= 20V, V
DS
= 0V
V
GS
= -20V, V
DS
= 0V
T
j
= 125°C
V
GS(th)
1.0
0.65
1.5
1.1
0.2
0.37
2.0
1.5
0.25
0.50
V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
T
j
= 125°C
R
DS (ON)
—
V
GS
= 5.0V, I
D
= 2.1A
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Max Continuous Drain-Source Diode
Forward Current
Drain-Source Diode Forward Voltage
I
D(ON)
g
FS
10
—
—
6.0
—
—
A
V
GS
= 5.0V, V
DS
= 5.0V
V
GS
= 10V, I
D
= 2.1A
m
C
ISS
C
OSS
C
RSS
—
—
—
528
85
20
—
—
—
pF
pF
pF
V
= 25V, V
GS
= 0V
f = 1.0MHz
t
D(ON)
t
r
t
D(OFF)
t
f
Q
g
Q
gs
Q
gd
—
—
—
—
—
—
—
9.0
72
49
47
10
1.5
5.6
20
120
80
80
16
—
—
ns
ns
ns
ns
nC
nC
nC
V
DD
= 50V, I
D
= 2.1A
V
GEN
= 5.0V, R
GEN
= 25
V
DS
= 80V, I
D
= 2.1A.
V
GS
= 5.0V
I
S
—
—
2.3
A
V
SD
—
—
1.3
V
V
GS
= 0V, I
S
= 2.3A (Note 2)
V
GS
= 0V, I
= 2.3A,
dl
F
/ dt = 100A / μs
Reverse Recovery Time
t
rr
—
—
150
ns
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