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參數(shù)資料
| 型號(hào)： | DT28F800F3T95 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT |
| 中文描述： | 512K X 16 FLASH 2.7V PROM, 95 ns, PDSO56 |
| 封裝： | 16 X 23.70 MM, SSOP-56 |
| 文件頁數(shù)： | 43/47頁 |
| 文件大?。?/td> | 277K |
| 代理商： | DT28F800F3T95 |
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E
8.11
FAST BOOT BLOCK DATASHEET
43
PRODUCT PREVIEW
DC Characteristics
(1)
—
Automotive Temperature
Sym
Parameter
Note
Typ
Max
Unit
Test Condition
I
CCS
V
CC
Standby Current
2,6
40
60
μA
V
CC
= V
CC
Max
V
CCQ
= V
CCQ
Max
CE# = RST# = V
IH
I
CCR
V
CC
Read Current
4,6
60
75
mA
Asynchronous
t
AVAV
= Min
V
CC
= V
CC
Max
V
CCQ
= V
CCQ
Max
V
IN
= V
IH
or V
IL
60
75
mA
Synchronous
CLK = 22 MHz
CE# = V
IL
OE# = V
IH
Burst length = 1
I
CCW
V
CC
Program Current
3,5,7
8
20
mA
V
PP
= V
PPH1
(3.0 V–3.6 V)
Program in progress
8
20
mA
V
PP
= V
PPH2
(11.4 V–12.6 V)
Program in progress
I
CCE
V
CC
Block Erase
Current
3,5,7
8
20
mA
V
PP
= V
PPH1
(3.0 V–3.6 V)
Block erase in progress
8
20
mA
V
PP
= V
PPH2
(11.4 V–12.6 V)
Block erase in progress
I
PPW
V
PP
Program Current
3,5,7
15
40
mA
V
PP
= V
PPH1
(3.0 V–3.6 V)
Program in progress
10
25
mA
V
PP
= V
PPH2
(11.4 V–12.6 V)
Program in progress
I
PPE
V
PP
Block Erase
Current
3,5,7
13
25
mA
V
PP
= V
PPH1
(3.0 V–3.6 V)
Block erase in progress
8
25
mA
V
PP
= V
PPH2
(11.4 V–12.6 V)
Block erase in progress
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at normal V
CC
, T = +25 °C.
2. Erases and program operations are inhibited when V
PP
≤
V
PPLK
, and not guaranteed outside the valid V
PP
ranges of V
PPH1
and V
PPH2
.
3. Sampled, not 100% tested.
4. Automatic Power Savings (APS) reduces I
CCR
to approximately standby levels, in static operation.
5. 12 V (11.4 V–12.6 V) can only be applied to V
PP
for a maximum of 80 hours over the lifetime of the device. V
PP
should not
be permanently tied to 12 V.
6. The specification is the sum of V
CC
and V
CCQ
currents.
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