參數(shù)資料
型號: DSP56F801FA80E
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述: 16-bit Digital Signal Controllers
中文描述: 16位數(shù)字信號控制器
文件頁數(shù): 21/48頁
文件大小: 375K
代理商: DSP56F801FA80E
Flash Memory Characteristics
56F801 Technical Data, Rev. 16
Freescale Semiconductor
21
Table 3-7 Flash Timing Parameters
Operating Conditions:
V
SS
= V
SSA
= 0 V, V
DD
= V
DDA
= 3.0–3.6V, T
A
= –40
°
to +85
°
C, C
L
50pF
Characteristic
Symbol
Min
Typ
Max
Unit
Figure
Program time
T
prog*
20
us
Figure 3-4
Erase time
T
erase*
20
ms
Figure 3-5
Mass erase time
T
me*
100
ms
Figure 3-6
Endurance
1
1.
One cycle is equal to an erase program and read.
E
CYC
10,000
20,000
cycles
Data Retention
1
D
RET
10
30
years
The following parameters should only be used in the Manual Word Programming Mode
PROG/ERASE to NVSTR set
up time
T
nvs*
5
us
Figure 3-4
,
Figure 3-5
,
Figure 3-6
NVSTR hold time
T
nvh*
5
us
Figure 3-4
,
Figure 3-5
NVSTR hold time (mass erase)
T
nvh1*
100
us
Figure 3-6
NVSTR to program set up time
T
pgs*
10
us
Figure 3-4
Recovery time
T
rcv*
1
us
Figure 3-4
,
Figure 3-5
,
Figure 3-6
Cumulative program
HV period
2
2.
programmed twice before next erase.
Thv is the cumulative high voltage programming time to the same row before next erase. The same address cannot be
T
hv
3
ms
Figure 3-4
Program hold time
3
3.
Parameters are guaranteed by design in smart programming mode and must be one cycle or greater.
*The Flash interface unit provides registers for the control of these parameters.
T
pgh
Figure 3-4
Address/data set up time
3
T
ads
Figure 3-4
Address/data hold time
3
T
adh
Figure 3-4
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