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參數(shù)資料
| 型號(hào)： | DS3234 |
| 廠商： | Maxim Integrated Products, Inc. |
| 英文描述： | Extremely Accurate SPI Bus RTC with Integrated Crystal and SRAM |
| 中文描述： | 高精度、SPI總線RTC，集成晶體和SRAM |
| 文件頁(yè)數(shù)： | 3/20頁(yè) |
| 文件大?。?/td> | 328K |
| 代理商： | DS3234 |
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D
Extremely Accurate SPI Bus RTC with
Integrated Crystal and SRAM
_____________________________________________________________________
3
ELECTRICAL CHARACTERISTICS (continued)
(V
CC
= 2.0V to 5.5V, V
CC
= active supply (see Table 1), T
A
= -40°C to +85°C, unless otherwise noted.) (Typical values are at
V
CC
=
3.3V, V
BAT
= 3.0V
, and T
A
= +25°C, unless otherwise noted. TCXO operation guaranteed from 2.3V to 5.5V on V
CC
and 2.3V to 3.8V on
V
BAT
.) (Notes 1, 2)
PARAMETER
SYMBOL
V
OL
V
OH
V
OL
V
OL
CONDITIONS
MIN
TYP
MAX
0.4
0.4
0.4
UNITS
V
V
V
V
Logic 0 Output, 32kHz
Logic 1 Output, DOUT
Logic 0 Output, DOUT,
INT
/SQW
Logic 0 Output,
RST
Output Leakage Current 32kHz,
INT
/SQW, DOUT
Input Leakage DIN,
CS
, SCLK
RST
Pin I/O Leakage
TCXO (V
CC
= 2.3V to 5.5V, V
BAT
= 2.3V to 3.8V, T
A
= -40
°
C to +85
°
C, unless otherwise noted.) (Notes 1 and 2)
Output Frequency
f
OUT
V
CC
= 3.3V or V
BAT
= 3.3V
I
OL
= 1mA
I
OH
= -1.0mA
I
OL
= 3mA
I
OL
= 1.0mA
0.85 x V
CC
I
LO
Output high impedance
-1
0
+1
μA
I
LI
I
OL
RST
high impedance (Note 5)
-1
+1
+10
μA
μA
-200
32.768
kHz
0°C to +40°C
-40°C to 0°C and
+40°C to +85°C
-2
+2
Frequency Stability vs.
Temperature
f/f
OUT
V
CC
= 3.3V or
V
BAT
= 3.3V
-3.5
+3.5
ppm
Frequency Stability vs. Voltage
f/V
1
ppm/V
-40°C
+25°C
+70°C
+85°C
0.7
0.1
0.4
0.8
Trim Register Frequency
Sensitivity per LSB
f/LSB
Specified at:
ppm
Temperature Accuracy
Temp
-3
+3
°C
First year
0–10 years
±1.0
±5.0
Crystal Aging
f/f
OUT
After reflow,
not production tested
ppm
ELECTRICAL CHARACTERISTICS
(
V
CC
= 0V, V
BAT
= 2.0V to 3.8V
, T
A
= -40°C to +85°C, unless otherwise noted.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
V
BAT
= 3.4V
1.5
2.3
Battery Current
(Note 4)
I
BAT
EOSC
= 0, BBSQW = 0
V
BAT
= 3.8V
1.5
2.5
μA
Temperature Conversion Current
Data-Retention Current
I
TC
EOSC
= 0, BBSQW = 0
EOSC
= 1
400
100
μA
nA
I
BATTC
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