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參數(shù)資料
| 型號： | DS1963S |
| 英文描述： | SHA iButton |
| 中文描述： | SHA iButton |
| 文件頁數(shù)： | 36/37頁 |
| 文件大?。?/td> | 349K |
| 代理商： | DS1963S |
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DS1963S
36 of 37
NOTES
1) System requirement.
2) Maximum allowable pullup resistance is a function of the number of 1-Wire devices in the system
and 1-Wire recovery times. The specified value here applies to systems with only one device and
with the minimum 1-Wire recovery times. For more heavily loaded systems, an active pullup such
as that found in the DS2480 may be required.
3)
Capacitance on the data pin could be 800pF when power is first applied. If a 2.2k resistor is
used to pull up the data line to V
PUP;
the parasite capacitance will not affect normal
communications 2.5μs after power has been applied.
4) Input load is to ground.
5) All voltages are referenced to ground.
6) V
TL
, V
TH
are a function of the internal supply voltage.
7) Voltage below which, during a falling edge on IO, a logic 0 is detected.
8) The voltage on IO needs to be less or equal to V
ILMAX
whenever the master drives the line low.
9) Voltage above which, during a rising edge on IO, a logic 1 is detected.
10) The I-V characteristic is linear for voltages less than 1V.
11)
is the time required for the pullup circuitry to pull the voltage on IO up from V
IL
to V
TH
.
12)
represents the time required for the pullup circuitry to pull the voltage on IO up from V
IL
to the
input high threshold of the bus master.
13) The number of SHA-1 computations possible with the built-in energy source depends on the
operating and storage temperature of the device.
14) Highlighted numbers are
not
in compliance with the published iButton standards. See comparison
tables below.
15) The recovery time was intentionally increased from the standard value of 1μs to a longer value to
improve the parasitic power supply of the device. This change improves the performance of the
chip and is not considered a non-compliance to the published standard.
Non-Compliance Table for T
A
= -40°C to +85°C
Standard Values
DS1963S Values
Parameter
Name
t
SLOT
(incl. t
REC
)
t
RSTL
t
PDH
t
PDL
t
W0L
t
SLS
, t
SPD
Standard Speed
min
61μs
480μs
15μs
60μs
60μs
15μs
Overdrive Speed
min
7μs
48μs
2μs
8μs
6μs
2μs
Standard Speed
min
69μs
540μs
17μs
78μs
64μs
19μs
Overdrive Speed
min
8μs
48μs
1.8μs
7.7μs
6μs
2μs
max
(undef.)
(undef.)
60μs
240μs
120μs
60μs
max
(undef.)
80μs
6μs
24μs
16μs
6μs
max
(undef.)
960μs
60μs
260μs
120μs
64μs
max
(undef.)
80μs
6μs
24μs
15.4μs
4.8μs
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1963S+F5 | 制造商:Maxim Integrated Products 功能描述:SHA IBTN 8SOIC - Rail/Tube |
| DS1963S-F5 | 功能描述:iButton RoHS:否 存儲類型:SRAM 存儲容量:512 B 組織: 工作電源電壓:3 V to 5.25 V 接口類型:1-Wire 最大工作溫度:+ 85 C 尺寸:17.35 mm x 5.89 mm 封裝 / 箱體:F5 MicroCan 制造商:Maxim Integrated |
| DS1963S-F5+ | 功能描述:iButton SHA iButton RoHS:否 存儲類型:SRAM 存儲容量:512 B 組織: 工作電源電壓:3 V to 5.25 V 接口類型:1-Wire 最大工作溫度:+ 85 C 尺寸:17.35 mm x 5.89 mm 封裝 / 箱體:F5 MicroCan 制造商:Maxim Integrated |
| DS1965S-1-F3 | 功能描述:iButton RoHS:否 存儲類型:SRAM 存儲容量:512 B 組織: 工作電源電壓:3 V to 5.25 V 接口類型:1-Wire 最大工作溫度:+ 85 C 尺寸:17.35 mm x 5.89 mm 封裝 / 箱體:F5 MicroCan 制造商:Maxim Integrated |
| DS1965S-1-F5 | 功能描述:iButton RoHS:否 存儲類型:SRAM 存儲容量:512 B 組織: 工作電源電壓:3 V to 5.25 V 接口類型:1-Wire 最大工作溫度:+ 85 C 尺寸:17.35 mm x 5.89 mm 封裝 / 箱體:F5 MicroCan 制造商:Maxim Integrated |
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