參數(shù)資料
型號: DS1822-PAR
元件分類: 溫度傳感器
英文描述: Econo 1-Wire?? Parasite-Power Digital Thermometer
文件頁數(shù): 17/19頁
文件大小: 138K
代理商: DS1822-PAR
DS1822-PAR
17 of 19
ABSOLUTE MAXIMUM RATINGS*
Voltage on any pin relative to ground
Operating temperature
Storage temperature
Soldering temperature
*These are stress ratings only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods of time may affect reliability.
DC ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
CONDITION
Pullup Supply
Voltage
Thermometer Error
t
ERR
-10°C to +85°C
–0.5V to +6.0V
–55
°
C to +100
°
C
–55
°
C to +125
°
C
See J-STD-020A Specification
(-55°C to +100°C; V
PU
=3.0V to 5.5V)
MIN
TYP
MAX
3.0
5.5
UNITS NOTES
V
V
PU
1,2
±2
±3
+0.8
5.5
1.5
°C
V
V
mA
mA
μA
°C
3
Input Logic Low
Input Logic High
Sink Current
Active Current
DQ Input Current
Drift
NOTES:
1. All voltages are referenced to ground.
2. The Pullup Supply Voltage specification assumes that the pullup device (resistor or transistor) is
ideal, and therefore the high level of the pullup is equal to V
PU
. In order to meet the V
IH
spec of the
DS1822-PAR, the actual supply rail for the strong pullup transistor must include margin for the
voltage drop across the transistor when it is turned on; thus: V
PU_ACTUAL
= V
PU_IDEAL
+ V
TRANSISTOR
.
3. See typical performance curve in Figure 15.
4. Logic low voltages are specified at a sink current of 4 mA.
5. To always guarantee a presence pulse under low voltage parasite power conditions, V
ILMAX
may have
to be reduced to as low as 0.5V.
6. Logic high voltages are specified at a source current of 1 mA.
7. Active current refers to supply current during active temperature conversions or EEPROM writes.
8. DQ line is high (“hi-Z” state).
9. Drift data is based on a 1000 hour stress test at 125°C.
-55°C to +100°C
V
I/O
=0.4V
V
IL
V
IH
I
L
I
DQA
I
DQ
-0.3
3.0
4.0
1,4,5
1,6
1
7
8
9
1
5
±0.2
AC ELECTRICAL CHARACTERISTICS: NV MEMORY
PARAMETER
SYMBOL
NV Write Cycle Time
t
wr
EEPROM Writes
N
EEWR
EEPROM Data Retention
t
EEDR
(-55°C to +100°C; V
PU
=3.0V to 5.5V)
CONDITION
MIN
TYP
-55°C to +55°C
50k
-55°C to +55°C
10
MAX
10
UNITS
ms
writes
years
2
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相關代理商/技術參數(shù)
參數(shù)描述
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