參數(shù)資料
型號(hào)： DS1270AB-70
英文描述： 16M Nonvolatile SRAM
中文描述： 1,600非易失SRAM
文件頁(yè)數(shù)： 6/8頁(yè)
文件大?。?/td> 173K
代理商： DS1270AB-70
DS1270Y/AB
6 of 8
POWER-DOWN/POWER-UP CONDITION
SEE NOTE 11
POWER-DOWN/POWER-UP TIMING
(t
A
: See Note 10)
PARAMETER
SYMBOL
V
CC
Fail Detect to
CE
and
WE
Inactive
t
PD
V
CC
slew from V
TP
to 0V
t
F
V
CC
slew from 0V to V
TP
t
R
V
CC
Valid to
CE
and
WE
Inactive
t
PU
V
CC
Valid to End of Write Protection
t
REC
(t
A
=25
°
C)
PARAMETER
SYMBOL
Expected Data Retention Time
t
DR
WARNING:
Under no circumstance are negative undershoots, of any amplitude, allowed when device is in battery
backup mode.
NOTES:
1.
WE
is high for a read cycle.
2.
OE
= V
IH
or V
IL
. If
OE
= V
IH
during write cycle, the output buffers remain in a high-impedance state.
3. t
WP
is specified as the logical AND of
CE
and
WE
. t
WP
is measured from the latter of
CE
or
WE
going low to the earlier of
CE
or
WE
going high.
4. t
DS
is measured from the earlier of
CE
or
WE
going high.
5. These parameters are sampled with a 5 pF load and are not 100% tested.
6. If the
CE
low transition occurs simultaneously with or latter than the
WE
low transition, the output
buffers remain in a high-impedance state during this period.
7. If the
CE
high transition occurs prior to or simultaneously with the
WE
high transition, the output
buffers remain in high-impedance state during this period.
MIN
150
150
TYP
MAX
1.5
2
125
UNITS NOTES
μ
s
μ
s
μ
s
ms
ms
11
MIN
5
TYP
MAX
UNITS NOTES
years
9
相關(guān)PDF資料
PDF描述
DS1270AB-70IND 16M Nonvolatile SRAM
DS1270Y 16M Nonvolatile SRAM
DS1270Y-100 16M Nonvolatile SRAM
DS1270Y-100IND 16M Nonvolatile SRAM
DS1270Y-70 16M Nonvolatile SRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DS1270AB-70# 功能描述:NVRAM 16M NV SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube
DS1270AB-70IND 功能描述:NVRAM 16M NV SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube
DS1270AB-70IND# 功能描述:NVRAM 16M NV SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube
DS1270W-100 功能描述:NVRAM 3.3V 16M NV SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube
DS1270W-100# 功能描述:NVRAM 3.3V 16M NV SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube
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