參數(shù)資料
型號: DS1270Y-70
英文描述: 16M Nonvolatile SRAM
中文描述: 1,600非易失SRAM
文件頁數(shù): 1/8頁
文件大?。?/td> 173K
代理商: DS1270Y-70
1 of 8
033104
FEATURES
5 years minimum data retention in the
absence of external power
Data is automatically protected during power
loss
Unlimited write cycles
Low-power CMOS operation
Read and write access times as fast as 70 ns
Lithium energy source is electrically
disconnected to retain freshness until power is
applied for the first time
Full
±
10% V
CC
operating range (DS1270Y)
Optional
±
5% V
CC
operating range
(DS1270AB)
Optional industrial temperature range of
-40
°
C to +85
°
C, designated IND
PIN ASSIGNMENT
PIN DESCRIPTION
A0 – A20
DQ0 - DQ7
CE
WE
OE
V
CC
GND
NC
- Address Inputs
- Data In/Data Out
- Chip Enable
- Write Enable
- Output Enable
- Power (+5V)
- Ground
- No Connect
DESCRIPTION
The DS1270 16M Nonvolatile SRAMs are 16,777,216-bit, fully static nonvolatile SRAMs organized as
2,097,152 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control
circuitry which constantly monitors V
CC
for an out-of-tolerance condition. When such a condition occurs,
the lithium energy source is automatically switched on and write protection is unconditionally enabled to
prevent data corruption. There is no limit on the number of write cycles which can be executed and no
additional support circuitry is required for microprocessor interfacing.
DS1270Y/AB
16M Nonvolatile SRAM
www.maxim-ic.com
13
14
15
16
17
18
1
2
3
4
5
6
7
8
9
10
11
12
35
34
33
32
31
30
29
28
27
26
25
24
36-Pin ENCAPSULATED PACKAGE
740-mil EXTENDED
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
V
CC
A19
NC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
36
23
22
21
A20
NC
DQ0
DQ1
GND
DQ2
DQ3
DQ4
19
20
相關PDF資料
PDF描述
DS1270Y-70IND 16M Nonvolatile SRAM
DS1284 Watchdog Timekeeper Chip
DS1285 Real Time Clock
DS1285Q Real Time Clock
DS1286 Watchdog Timekeeper
相關代理商/技術參數(shù)
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