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參數(shù)資料
| 型號： | DS1258Y-70 |
| 廠商： | DALLAS SEMICONDUCTOR |
| 元件分類： | Static RAM |
| 英文描述： | 128K X 16 NON-VOLATILE SRAM MODULE, 70 ns, DIP40 |
| 封裝： | 0.740 INCH, EXTENDED MODULE, DIP-40 |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 156K |
| 代理商： | DS1258Y-70 |
DS1258Y/AB
6 of 8
POWER-DOWN/POWER-UP CONDITION
POWER-DOWN/POWER-UP TIMING
(tA: 0
°C to 70°C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
CEU
, CEL at VIH before Power-Down
tPD
0
s
11
VCC slew from VTP to 0V
tF
300
s
VCC slew from 0V to VTP
tR
300
s
CEU
, CEL at VIH after Power-Up
tREC
2
125
ms
(tA=25
°C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Expected Data Retention Time
tDR
10
years
9
WARNING:
Under no circumstance are negative undershoots, of any amplitude, allowed when device is in battery
backup mode.
NOTES:
1.
WE
is high for a Read Cycle.
2. OE = VIH or VIL. If OE = VIH during write cycle, the output buffers remain in a high impedance state.
3. tWP is specified as the logical AND of CEU or CEL and WE . tWP is measured from the latter of CEU ,
CEL
or WE going low to the earlier of CEU , CEL or WE going high.
4. tDS is measured from the earlier of CEU or CEL or WE going high.
5. These parameters are sampled with a 5 pF load and are not 100% tested.
6. If the CEU or CEL low transition occurs simultaneously with or later than the WE low transition in
the output buffers remain in a high impedance state during this period.
7. If the CEU or CEL high transition occurs prior to or simultaneously with the WE high transition, the
output buffers remain in high impedance state during this period.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DS1258Y-100 | 128K X 16 NON-VOLATILE SRAM MODULE, 100 ns, DIP40 |
| DS1265AB-100 | 1M X 8 NON-VOLATILE SRAM MODULE, 100 ns, DMA36 |
| DS1265Y-70 | 1M X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA36 |
| DS1265AB | 1M X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDIP36 |
| DS1265Y | 1M X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDIP36 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1258Y-70# | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1258Y-70IND | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1258Y-70-IND | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:128k x 16 Nonvolatile SRAM |
| DS1258Y-70IND# | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1259 | 功能描述:電池管理 RoHS:否 制造商:Texas Instruments 電池類型:Li-Ion 輸出電壓:5 V 輸出電流:4.5 A 工作電源電壓:3.9 V to 17 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:VQFN-24 封裝:Reel |
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