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參數(shù)資料
| 型號(hào)： | DS1258Y-70 |
| 廠商： | DALLAS SEMICONDUCTOR |
| 元件分類： | Static RAM |
| 英文描述： | 128K X 16 NON-VOLATILE SRAM MODULE, 70 ns, DIP40 |
| 封裝： | 0.740 INCH, EXTENDED MODULE, DIP-40 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 156K |
| 代理商： | DS1258Y-70 |
DS1258Y/AB
3 of 8
impedance. As VCC falls below approximately 3.0 volts, a power switching circuit connects the lithium
energy source to RAM to retain data. During power-up, when VCC rises above approximately 3.0 volts,
the power switching circuit connects external VCC to RAM and disconnects the lithium energy source.
Normal RAM operation can resume after VCC exceeds 4.75 volts for the DS1258AB and 4.5 volts for the
DS1258Y.
FRESHNESS SEAL
The DS1258 devices are shipped from Dallas Semiconductor with the lithium energy sources
disconnected, guaranteeing full energy capacity. When VCC is first applied at a level greater than VTP, the
lithium energy source is enabled for battery backup operation.
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
-0.3V to +7.0V
Operating Temperature
0°C to 70°C
Storage Temperature
-40°C to +70°C
Soldering Temperature
260°C for 10 seconds
*
This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
(tA: 0
°C to 70°C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
DS1258AB Power Supply Voltage
VCC
4.75
5.0
5.25
V
DS1258AB Power Supply Voltage
VCC
4.5
5.0
5.5
V
Logic 1
VIH
2.2
VCC
V
Logic 0
VIL
0.0
+0.8
V
DC ELECTRICAL
(VCC=5V
±=5% for DS1258AB)
CHARACTERISTICS
(tA: 0
°C to 70°C) (V
CC=5V
±=10% for DS1258Y)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Input Leakage Current
IIL
-2.0
+2.0
A
I/O Leakage Current CE
≥ V
IH
≤ V
CC
IIO
-1.0
+1.0
A
Output Current @ 2.4V
IOH
-1.0
mA
Output Current @ 0.4V
IOL
2.0
mA
Standby Current CEU , CEL =2.2V
ICCS1
10
20
mA
Standby Current CEU , CEL =VCC-0.5V
ICCS2
610
mA
Operating Current
ICCO1
170
mA
Write Protection Voltage (DS1258AB)
VTP
4.50
4.62
4.75
V
Write Protection Voltage (DS1258Y)
VTP
4.25
4.37
4.5
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DS1258Y-100 | 128K X 16 NON-VOLATILE SRAM MODULE, 100 ns, DIP40 |
| DS1265AB-100 | 1M X 8 NON-VOLATILE SRAM MODULE, 100 ns, DMA36 |
| DS1265Y-70 | 1M X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA36 |
| DS1265AB | 1M X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDIP36 |
| DS1265Y | 1M X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDIP36 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1258Y-70# | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1258Y-70IND | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1258Y-70-IND | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:128k x 16 Nonvolatile SRAM |
| DS1258Y-70IND# | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1259 | 功能描述:電池管理 RoHS:否 制造商:Texas Instruments 電池類型:Li-Ion 輸出電壓:5 V 輸出電流:4.5 A 工作電源電壓:3.9 V to 17 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:VQFN-24 封裝:Reel |
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