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參數(shù)資料
| 型號： | DS1245Y |
| 廠商： | DALLAS SEMICONDUCTOR |
| 元件分類： | DRAM |
| 英文描述： | 1024K Nonvolatile SRAM(1024K 非易失性靜態(tài)RAM) |
| 中文描述： | 128K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA32 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 119K |
| 代理商： | DS1245Y |
DS1245Y/AB
042398 3/12
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
Operating Temperature
Storage Temperature
Soldering Temperature
–0.3V to +7.0V
0
°
C to 70
°
C, –40
°
C to +85
°
C for Ind parts
–40
°
C to +70
°
C, –40
°
C to +85
°
C for Ind parts
260
°
C for 10 seconds
* This is a stress rating only and functional operation of the device at these or any other conditions above those
indicated in the operation sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
(t
A
: See Note 10)
UNITS
PARAMETER
SYMBOL
MIN
TYP
MAX
NOTES
DS1245AB Power Supply Voltage
V
CC
4.75
5.0
5.25
V
DS1245Y Power Supply Voltage
V
CC
4.5
5.0
5.5
V
Logic 1
V
IH
2.2
V
CC
V
Logic 0
V
IL
0.0
0.8
V
(V
CC
=5V
±
5% for DS1245AB)
DC ELECTRICAL CHARACTERISTICS
(t
A
: See Note 10) (V
CC
=5V
±
10% for DS1245Y)
TYP
MAX
PARAMETER
SYMBOL
MIN
UNITS
NOTES
Input Leakage Current
I
IL
–1.0
+1.0
μ
A
I/O Leakage Current
CE > V
IH
< V
CC
I
IO
–1.0
+1.0
μ
A
Output Current @ 2.4V
I
OH
–1.0
mA
Output Current @ 0.4V
I
OL
2.0
mA
Standby Current CE=2.2V
I
CCS1
5.0
10.0
mA
Standby Current CE=V
CC
–0.5V
I
CCS2
3.0
5.0
mA
Operating Current
I
CCO1
85
mA
Write Protection Voltage
(DS1245AB)
V
TP
4.50
4.62
4.75
V
Write Protection Voltage
(DS1245Y)
V
TP
4.25
4.37
4.5
V
CAPACITANCE
(t
A
= 25
°
C)
NOTES
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
Input Capacitance
C
IN
5
10
pF
Input/Output Capacitance
C
I/O
5
10
pF
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| DS1249AB | 2048K Nonvolatile SRAM(2048K 非易失性靜態(tài)RAM) |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| DS1245Y/AB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1024K Nonvolatile SRAM |
| DS1245Y_10 | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:1024k Nonvolatile SRAM |
| DS1245Y-070 | 制造商:Maxim Integrated Products 功能描述: |
| DS1245Y-100 | 功能描述:NVRAM 1024K SRAM Nonvolatile RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1245Y-100+ | 功能描述:NVRAM 1024K SRAM Nonvolatile RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
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