參數(shù)資料
型號(hào): DS1220Y-200
英文描述: 16k Nonvolatile SRAM
中文描述: 16K的非易失SRAM
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 164K
代理商: DS1220Y-200
DS1220Y
3 of 8
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
Operating Temperature
Storage Temperature
Soldering Temperature
-0.3V to +7.0V
0
°
C to 70
°
C; -40
°
C to +85
°
C for IND parts
-40
°
C to +70
°
C; -40
°
C to +85
°
C for IND parts
260
°
C for 10 seconds
This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
Power Supply Voltage
Input Logic 1
Input Logic 0
(T
A
: See Note 10)
UNITS
V
V
V
SYMBOL
V
CC
V
IH
V
IL
MIN
4.5
2.2
0.0
TYP
5.0
MAX
5.5
V
CC
+0.8
NOTES
DC ELECTRICAL CHARACTERISTICS
(T
A
: See Note 10; V
CC
= 5V ± 10%)
PARAMETER
SYMBOL
Input Leakage Current
I
IL
I/O Leakage Current
CE
V
IH
V
CC
Output Current @ 2.4V
I
OH
Output Current @ 0.4V
I
OL
Standby Current CE =2.2V
I
CCS1
Standby Current CE =V
CC
-0.5V
I
CCS2
Operating Current t
CYC
= 200ns
(Commercial)
Operating Current t
CYC
=200ns
(Industrial)
Write Protection Voltage
V
TP
MIN
-1.0
-1.0
TYP
MAX
+1.0
+1.0
UNITS
μ
A
μ
A
NOTES
I
IO
-1.0
2.0
mA
mA
mA
mA
mA
3.0
2.0
7.0
4.0
75
I
CCO1
I
CCO1
85
mA
4.25
V
CAPACITANCE
PARAMETER
Input Capacitance
Input/Output Capacitance
(T
A
= 25°C)
UNITS
pF
pF
SYMBOL
C
IN
C
I/O
MIN
TYP
5
5
MAX
10
12
NOTES
相關(guān)PDF資料
PDF描述
DS1220 16k Nonvolatile SRAM
DS1220AB-100-IND M39012 MIL RF CONNECTOR
DS1220AB-120-IND M39012 MIL RF CONNECTOR
DS1220AD-100-IND 16k Nonvolatile SRAM
DS1220AD-120-IND 16k Nonvolatile SRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DS1220Y-200+ 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類(lèi)型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube
DS1220Y-200-IND 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (Battery Based)
DS1220Y-200IND+ 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類(lèi)型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube
DS1221 功能描述:IC CTRLR/DECODER 4BIT 16-DIP RoHS:否 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 - 控制器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 控制器類(lèi)型:靜態(tài) RAM(SRAM) 電源電壓:4.5 V ~ 5.5 V 工作溫度:0°C ~ 70°C 封裝/外殼:16-SOIC(0.295",7.50mm 寬) 供應(yīng)商設(shè)備封裝:16-SOIC W 包裝:管件
DS1221S 功能描述:IC CTRLR/DECODER 4BIT 16-SOIC RoHS:否 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 - 控制器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 控制器類(lèi)型:靜態(tài) RAM(SRAM) 電源電壓:4.5 V ~ 5.5 V 工作溫度:0°C ~ 70°C 封裝/外殼:16-SOIC(0.295",7.50mm 寬) 供應(yīng)商設(shè)備封裝:16-SOIC W 包裝:管件