參數(shù)資料
型號(hào)： DRA3144V
廠商： PANASONIC CORP
元件分類(lèi)： 小信號(hào)晶體管
英文描述： SMALL SIGNAL TRANSISTOR
封裝： HALOGEN FREE AND ROHS COMPLIANT, SSSMINI3-F2-B, 3 PIN
文件頁(yè)數(shù)： 1/4頁(yè)
文件大小： 437K
代理商： DRA3144V
ZJH00436AED
This product complies with the RoHS Directive (EU 2002/95/EC).
Publication date: January 2010
1
DRA3144V
Silicon PNP epitaxial planar type
For digital circuits
Complementary to DRC3144V
Features
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Packaging
Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard)
Absolute Maximum Ratings
T
a
= 25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
–50
V
Collector-emitter voltage (Base open)
V
CEO
–50
V
Collector current
I
C
–100
mA
Total power dissipation
P
T
100
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
–55 to +150
°
C
Electrical Characteristics
T
a
= 25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= –10 μA, I
E
= 0
–50
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= –2 mA, I
B
= 0
–50
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= –50 V, I
E
= 0
– 0.1
μA
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= –50 V, I
B
= 0
– 0.5
μA
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
= –6 V, I
C
= 0
– 0.2
mA
Forward current transfer ratio
h
FE
V
CE
= –10 V, I
C
= –5 mA
30
Collector-emitter saturation voltage
V
CE(sat)
I
C
= –10 mA, I
B
= – 0.5 mA
– 0.25
V
Input voltage (ON)
V
I(on)
V
CE
= – 0.2 V, I
C
= –5 mA
–6.3
V
Input voltage (OFF)
V
I(off)
V
CE
= –5 V, I
C
= –100 μA
–1.9
V
Input resistance
R
1
–30%
47
+30%
k
Ω
Resistance ratio
R
1
/ R
2
3.7
4.7
5.7
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Package
Code
SSSMini3-F2-B
Pin Name
1: Base
2: Emitter
3: Collector
Marking Symbol: LJ
Internal Connection
C
B
R
1
R
2
E
Resistance
value
R
1
R
2
47
10
k
Ω
k
Ω
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