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參數(shù)資料
| 型號： | DRCF143X |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ML3-N4-B, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 414K |
| 代理商： | DRCF143X |
Note: Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring
methods for transistors.
Embossed type (Thermo-compression sealing) : 10 000 pcs / reel
Internal Connection
Package Code : ML3-N4-B
Semiconductor Company, Panasonic Corporation
2010.2.26
2010.7.12
Prepared
Revised
Collector-emitter voltage (Base open)
Collector current
VCEO
IC
Tentative
DRCF143X
Total pages
page
50
100
V
Unit
V
Collector-base voltage (Emitter open)
VCBO
50
Absolute Maximum Ratings
Ta = 25 °C
Parameter
Symbol
Rating
DRCF143X
Silicon NPN epitaxial planar type
For digital circuits
Marking Symbol : N6
mA
mW
°C
Total power dissipation
Junction temperature
Storage temperature
PT
Tj
100
150
Tstg
°C
-55 to +150
Electrical Characteristics
Ta = 25 °C±3 °C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Symbol
VCBO
VCEO
ICBO
ICEO
IEBO
Conditions
Min
50
50
Typ
Max
Unit
V
V
μ
A
μ
A
mA
-
V
IC = 10
μ
A, IE = 0
IC = 2 mA, IB = 0
VCB = 50 V, IE = 0
VCE = 50 V, IB = 0
VEB = 6 V, IC = 0
0.1
0.5
1.0
Forward current transfer ratio
Collector-emitter saturation voltage
hFE
VCE = 10 V, IC = 5 mA
IC = 10 mA, IB = 0.5 mA
30
0.25
Vi(on)
Vi(off)
VCE = 0.2 V, IC = 5 mA
VCE = 5 V, IC = 100
μ
A
1.7
V
0.6
+30%
0.57
Input resistance
Resistance ratio
R1
-30%
0.37
4.7
0.47
k
Ω
-
Packing
R1/R2
Resistance
value
R1
R2
1.
4.7
10
Base
k
Ω
k
Ω
2.
Emitter
3.
Collector
Input voltage
Pin name
VCE(sat)
R1
R2
B
C
E
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