參數(shù)資料
型號(hào): DRCQA24T
廠商: PANASONIC CORP
元件分類: 小信號(hào)晶體管
英文描述: 80 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: HALOGEN FREE AND ROHS COMPLIANT, USSMINI3-F1-B, 3 PIN
文件頁(yè)數(shù): 1/3頁(yè)
文件大小: 248K
代理商: DRCQA24T
Ver. AED
This product complies with the RoHS Directive (EU 2002/95/EC).
Publication date: May 2011
1
DRCQA24T
Silicon NPN epitaxial planar type
For digital circuits
Complementary to DRAQA24T
DRC3124T in USSMini3 type package
Features
High forward current transfer ratio h
FE
with excellent linearity
Low collector-emitter saturation voltage V
CE(sat)
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Packaging
Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard)
Absolute Maximum Ratings
T
a
= 25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
50
V
Collector-emitter voltage (Base open)
V
CEO
50
V
Collector current
I
C
80
mA
Total power dissipation
P
T
100
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
–55 to +150
°
C
Electrical Characteristics
T
a
= 25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= 10 μA, I
E
= 0
50
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= 2 mA, I
B
= 0
50
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 50 V, I
E
= 0
0.1
μA
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= 50 V, I
B
= 0
0.5
μA
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
= 6 V, I
C
= 0
0.01
mA
Forward current transfer ratio
h
FE
V
CE
= 10 V, I
C
= 5 mA
160
460
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 10 mA, I
B
= 0.5 mA
0.25
V
Input voltage (ON)
V
I(on)
V
CE
= 0.2 V, I
C
= 5 mA
1.8
V
Input voltage (OFF)
V
I(off)
V
CE
= 5 V, I
C
= 100 μA
0.4
V
Input resistance
R
1
–30%
22
+30%
k
Ω
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Package
Code
USSMini3-F1-B
Pin Name
1: Base
2: Emitter
3: Collector
Marking Symbol: JT
Internal Connection
C
B
R
1
E
Resistance value
R
1
22
k
Ω
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