參數(shù)資料
型號(hào)： DMN5L06W-7
廠商： DIODES INC
元件分類： 功率晶體管
英文描述： N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
中文描述： 280 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： GREEN, ULTRA SMALL, PLASTIC PACKAGE-3
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 134K
代理商： DMN5L06W-7
DS30613 Rev. 3 - 2
2 of 4
DMN5L06W
www.diodes.com
Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
BV
DSS
50
V
V
GS
= 0V, I
D
= 10 A
Zero Gate Voltage Drain Current
@ T
C
= 25°C
@ T
C
= 125°C
I
DSS
0.1
500
±20
μA
V
DS
= 50V, V
GS
= 0V
Gate-Body Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
GSS
nA
V
GS
= ±20V, V
DS
= 0V
V
GS(th)
0.49
1.2
V
V
DS
= V
GS
, I
D
= 250 A
V
GS
= 2.7V, I
D
= 0.2A,
V
GS
= 1.8V, I
D
= 50mA
V
GS
= 10V, V
DS
= 7.5V
V
DS
=10V, I
D
= 0.2A
V
GS
= 0V, I
S
= 115mA
Static Drain-Source On-Resistance
R
DS (ON)
1.6
2.2
3
4
On-State Drain Current
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
I
D(ON)
Y
fs
V
SD
0.5
200
0.5
1.0
A
mS
V
1.4
C
iss
C
oss
C
rss
50
25
5.0
pF
pF
pF
V
= 25V, V
GS
= 0V
f = 1.0MHz
N
0
0.3
0.6
0.9
0
1
DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
2
3
4
5
V
DS
,
I
D
D
,
1.2
1.5
6V
5V
3V
4V
V
= 10V
8V
6V
5V
4V
3V
GS
10V
8V
V
, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
GS
0.01
3
I
D
D
0.001
0.1
1
0
0.5
1
1.5
2
2.5
3.5
V
Pulsed
= 10V
DS
T = 150 C
°
T = 125 C
°
T = 85 C
°
T = 25 C
°
T = -55 C
°
T = 0 C
°
T = -25 C
°
T , CHANNEL TEMPERATURE (°C)
Fig. 3 Gate Threshold Voltage
vs. Channel Temperature
0
-50
-25
0
25
50
75
100 125 150
V
G
G
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
-75
V
= 10V
I = 1mA
Pulsed
DS
0.1
I
DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance
Vs. Drain Current
D
,
1
10
0.001
0.01
0.1
1
V
Pulsed
= 10V
GS
T = 150 C
°
T = -55 C
°
T = 125 C
°
T = -25 C
°
T = 85 C
°
T = 0 C
°
T = 25 C
°
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