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參數(shù)資料
| 型號(hào)： | DMN5L06 |
| 廠商： | Diodes Inc. |
| 英文描述： | SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 中文描述： | 單個(gè)N -溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 135K |
| 代理商： | DMN5L06 |
Lead-free Green
DS30614 Rev. 3 - 2
1 of 4
DMN5L06
www.diodes.com
Diodes Incorporated
DMN5L06
SINGLE N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
Features
Single N-Channel MOSFET
Low On-Resistance
Very
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 2)
“Green” Device (Note 3)
Maximum Ratings
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
Value
Units
Drain-Source Voltage
V
DSS
50
V
Drain-Gate Voltage R
GS
1.0M
V
DGR
50
V
Gate-Source Voltage
Continuous
Pulsed
V
GSS
±20
±40
V
Drain Current (Note 1)
Continuous
I
D
280
mA
Drain Current (Note 1) Pulsed
I
DM
1.5
A
Total Power Dissipation (Note 1)
P
d
350
mW
Thermal Resistance, Junction to Ambient (Note 1)
R
JA
357
°C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
°C
A
E
J
L
TOP VIEW
M
B
C
H
G
D
K
D
G
S
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic, "Green" Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals Connections: See Diagram
Terminals: Finish
leadframe. Solderable per MIL-STD-202, Method 208
Matte Tin annealed over Copper
Marking: Date Code and Type Code, See Page 2
Ordering & Date Code Information: See Page 2
Weight: 0.008 grams (approximate)
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php
.
SOT-23
Min
Dim
A
B
C
D
E
G
H
J
K
L
M
Max
0.37
0.51
1.20
1.40
2.30
2.50
0.89
1.03
0.45
0.60
1.78
2.05
2.80
3.00
0.013
0.10
0.903
1.10
0.45
0.61
0.085
0.180
0
8
All Dimensions in mm
Source
Gate
Drain
N
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DMN5L06-7 | 功能描述:MOSFET N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| DMN5L06DMK | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN5L06DMK_0709 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN5L06DMK-7 | 功能描述:MOSFET Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| DMN5L06DW | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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