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參數(shù)資料
| 型號(hào)： | DMN601DMK |
| 廠商： | Diodes Inc. |
| 英文描述： | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 中文描述： | 雙N溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 130K |
| 代理商： | DMN601DMK |
Lead-free Green
DS30657 Rev. 2 - 2
1 of 4
DMN601DMK
Diodes Incorporated
www.diodes.com
DMN601DMK
DUAL N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
Features
Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 2)
ESD Protected Up To 2kV
"Green" Device (Note 4)
Maximum Ratings
@ T
A
= 25
°
C unless otherwise specified
A
M
J
L
D
F
B C
H
K
Mechanical Data
Case: SOT-26
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals Connections: See Diagram
Terminals: Finish
Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Marking: See Page 2
Ordering & Date Code Information: See Page 2
Weight: 0.015 grams (approximate)
S
1
D
1
D
2
S
2
G
1
G
2
T
C
U
D
O
R
P
W
E
N
Source
Body
Diode
EQUIVALENT CIRCUIT PER ELEMENT
Gate
Protection
Diode
Gate
Drain
ESD protected up to 2kV
Characteristic
Symbol
Value
Units
Drain-Source Voltage
V
DSS
60
V
Gate-Source Voltage
V
GSS
±20
V
Drain Current (Note 1)
Continuous
Pulsed (Note 3)
I
D
305
800
mA
Total Power Dissipation (Note 1)
P
d
225
mW
Thermal Resistance, Junction to Ambient
R
θ
JA
556
°C/W
Operating and Storage Temperature Range
T
j
, T
STG
-65 to +150
°C
Note: 1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width
≤
10
μ
S, Duty Cycle
≤
1%.
SOT-26Min
Dim
A
B
C
D
F
H
J
K
L
M
α
All Dimensions in mm
Max
Typ
0.35
0.50
0.38
1.50
1.70
1.60
2.70
2.90
3.00
3.10
2.80
0.95
0.55
3.00
0.013 0.10
0.05
1.00
1.30
1.10
0.35
0.55
0.40
0.10
0
°
0.20
8
°
0.15
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DMN601DMK_07 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN601DMK-7 | 功能描述:MOSFET Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| DMN601DWK | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN601DWK_07 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN601DWK-7 | 功能描述:MOSFET Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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