參數(shù)資料
型號： DMN601DMK
廠商： Diodes Inc.
英文描述： DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
中文描述： 雙N溝道增強(qiáng)型場效應(yīng)晶體管
文件頁數(shù)： 3/4頁
文件大小： 130K
代理商： DMN601DMK
DS30657 Rev. 2 - 2
3 of 4
DMN601DMK
www.diodes.com
T
C
U
D
O
R
P
W
E
N
1
I , DRAIN CURRENT (A)
Fig.10 Forward Transfer Admittance
vs. Drain Current
|
f
0.001
0.01
0.1
0.001
0.01
0.1
1
V
Pulsed
= 10V
GS
T = 25
°
C
T = -55
°
C
T = 150
°
C
T = 85
°
C
1
0.001
0.01
0.1
1
0
0.5
I
D
V
, SOURCE-DRAIN VOLTAGE (V)
Fig. 9 Reverse Drain Current
vs. Source-Drain Voltage
SD
V
= 0V
GS
V
= 10V
GS
T = 25°C
Pulsed
I
,
D
0.001
0.01
0.1
1
0
0.5
1
1.5
V
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Reverse Drain Current
vs. Source-Drain Voltage
SD
V
Pulsed
= 0V
GS
T
= -55
°
C
A
T
= 150
°
C
A
T
= 125
°
C
A
T
= 85
°
C
A
T = 25
°
C
T = 0
°
C
T = -25
°
C
0
Tch, CHANNEL TEMPERATURE (
°
C)
Fig. 7
Static Drain-Source On-State Resistance
vs. Channel Temperature
0.5
1
1.5
2
2.5
-75
-50
-25
0
25
50
75
100 125 150
V
Pulsed
= 10V
GS
I = 300mA
I = 150mA
0
V
GATE SOURCE VOLTAGE (V)
GS,
Fig. 6 Static Drain-Source On-Resistance
vs. Gate-Source Voltage
1
2
3
4
5
6
7
0
2
4
6
8
10
12
14
16
18
20
I = 300mA
I = 150mA
T = 25
°
C
Pulsed
1
I , DRAIN CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance
vs. Drain Current
10
0.1
1
0.001
0.01
0.1
V
Pulsed
= 5V
GS
T = 150
°
C
T = 125
°
C
T = 85
°
C
T = -55
°
C
T = 25
°
C
T = -25
°
C
T = 0
°
C
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DMN601DMK_07 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN601DMK-7 功能描述:MOSFET Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
DMN601DWK 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN601DWK_07 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN601DWK-7 功能描述:MOSFET Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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