參數(shù)資料
型號(hào)： DDC114YH-7
廠商： DIODES INC
元件分類： 功率晶體管
英文描述： NPN PRE-BIASED SMALL SIGNAL SOT-563 DUAL SURFACE MOUNT TRANSISTOR
中文描述： 70 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： GREEN, PLASTIC PACKAGE-6
文件頁數(shù)： 2/30頁
文件大?。?/td> 389K
代理商： DDC114YH-7
""#
SBAS255A JUNE 2004 REVISED NOVEMBER 2004
www.ti.com
2
PACKAGE/ORDERING INFORMATION
For the most current package and ordering information,
see the Package Option Addendum located at the end of
this data sheet.
ABSOLUTE MAXIMUM RATINGS
(1)
Analog Input Current
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AVDD to DVDD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AVDD to AGND
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DVDD to DGND
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AGND to DGND
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VREF Input to AGND
. . . . . . . . . . . . . . . . . .
Analog Input to AGND
. . . . . . . . . . . . . . . . . . . . . . .
Digital Input Voltage to DGND
Digital Output Voltage to DGND
Operating Temperature
. . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature
. . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature (TJ)
. . . . . . . . . . . . . . . . . . . . . . . . . . .
(1)Stresses above these ratings may cause permanent damage.
Exposure to absolute maximum conditions for extended periods
may degrade device reliability. These are stress ratings only, and
functional operation of the device at these or any other conditions
beyond those specified is not implied.
750
μ
A
0.3V to +6V
0.3V to +6V
0.3V to +6V
±
0.2V
2.0V to AVDD + 0.3V
0.3V to +0.7V
0.3V to DVDD + 0.3V
0.3V to AVDD + 0.3V
40
°
C to +85
°
C
60
°
C to +150
°
C
. . . . . . . . . . .
. . . . . . . . .
+150
°
C
This integrated circuit can be damaged by ESD. Texas
Instruments recommends that all integrated circuits be
handled with appropriate precautions. Failure to observe
proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to
complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could
cause the device not to meet its published specifications.
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