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| 型號(hào)： | DDC114EH |
| 廠商： | Diodes Inc. |
| 英文描述： | NPN PRE-BIASED SMALL SIGNAL SOT-563 DUAL SURFACE MOUNT TRANSISTOR |
| 中文描述： | npn型預(yù)偏置信號(hào)小的SOT - 563雙表面貼裝晶體管 |
| 文件頁(yè)數(shù)： | 3/30頁(yè) |
| 文件大小： | 389K |
| 代理商： | DDC114EH |
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SBAS255A JUNE 2004 REVISED NOVEMBER 2004
www.ti.com
3
ELECTRICAL CHARACTERISTICS
At TA = +25
°
C, AVDD = +5V, DVDD = 3V, VREF = +4.096V, Range 5 (250pC), and continuous mode operation, unless otherwise noted.
Low-Power Mode: TINT = 400
μ
s and CLK = 4MHz; High-Speed Mode: TINT = 320
μ
s and CLK = 4.8MHz.
Low-Power Mode
High-Speed Mode
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
ANALOG INPUT RANGE
Range 0
Range 1
Range 2
Range 3
Range 4
Range 5
Range 6
Range 7
Negative Full-Scale Range
Input Current
(2)
10.2
47.5
95
142.5
190
237.5
285
332.5
0.4% of Positive Full-Scale Range
750
12
50
100
150
200
250
300
350
13.8
52.5
105
157.5
210
262.5
315
367.5
(1)
pC
pC
pC
pC
pC
pC
pC
pC
pC
1
μΑ
DYNAMIC CHARACTERISTICS
Data Rate
2.5
3.125
kSPS
μ
S
μ
S
Integration Time, T
INT
Continuous Mode
400
50
1,000,000
320
Noncontinuous Mode, Range 1 to 7
System Clock Input (CLK)
CLK_4X = 0
CLK_4X = 1
Data Clock (DCLK)
4
4.8
19.2
MHz
MHz
MHz
16
16
ACCURACY
Noise, Low-Level Input
(3)
C
SENSOR(4)
= 50pF, Range 5 (250pC)
5.2
6.5
5.5
7
ppm of
FSR
(5)
, rms
Integral Linearity Error
(6)
±
0.01% Reading
±
0.5ppm FSR, typ
±
0.025% Reading
±
1.0ppm FSR, max
20
16
0.1
0.1
1:1
±
400
±
100
±
0.05
±
25
11
±
10
Resolution
FORMAT = 1
FORMAT = 0
Bits
Bits
pA
Input Bias Current
Range Error Match
(7)
Range Sensitivity to VREF
Offset Error
Offset Error Match
(7)
DC Bias Voltage
(9)
Power-Supply Rejection Ratio
Internal Test Signal
Internal Test Accuracy
10
0.5
All Ranges
V
REF
= 4.096
±
0.1V
% of FSR
±
1000
ppm of FSR
ppm of FSR
mV
ppm of FSR/V
pC
%
±
2
±
200
at dc
PERFORMANCE OVER TEMPERATURE
Offset Drift
±
0.5
±
3
(8)
ppm of
FSR/
°
C
ppm of FSR/
minute
μ
V/
°
C
pA/
°
C
ppm/
°
C
ppm/
°
C
Offset Drift Stability
±
0.2
±
1
(8)
DC Bias Voltage Drift
(9)
Input Bias Current Drift
Range Drift
(10)
Range Drift Match
(7)
3
T
A
= +25
°
C to +45
°
C
0.01
25
±
0.05
1
(8)
REFERENCE
Voltage
Input Current
(11)
4.000
4.096
75
4.200
95
V
μ
A
Average Value
(1)
indicates specification is the same as Low-Power Mode.
(2)Exceeding maximum input current specification may damage device.
(3)Input is less than 1% of full scale.
(4)CSENSOR is the capacitance seen at the DDC114 inputs from wiring, photodiode, etc.
(5)FSR is Full-Scale Range.
(6)A best-fit line is used in measuring nonlinearity.
(7)Matching between side A and side B of the same input.
(8)Ensured by design, not production tested.
(9)Voltage produced by the DDC114 at its input which is applied to the sensor.
(10)Range drift does not include external reference drift.
(11)Input reference current decreases with increasing TINT (see the
Voltage Reference
section, page 11).
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| DDC114EH-7 | 功能描述:開關(guān)晶體管 - 偏壓電阻器 150MW 10K RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
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| DDC114EK-7-F | 制造商:Diodes Incorporated 功能描述:PREBIASED TRANSISTOR SOT-26 R1=R2 NPN 300MW 10KOHMS 10KOHMS - Tape and Reel |
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