參數(shù)資料
型號(hào): DCR5980A
英文描述: Phase Control Thyristors (SCR) - Disc / Puk Devices
中文描述: 相位控制晶閘管(可控硅) -光盤(pán)/北辰設(shè)備
文件頁(yè)數(shù): 6/9頁(yè)
文件大?。?/td> 124K
代理商: DCR5980A
DCR5980A
6/9
www.dynexsemi.com
Fig.4 Recovered charge
Fig.5 Gate characteristics
Fig.6 Maximum (limit) transient thermal impedance -
junction to case (C/W)
Fig.7 Sub-cycle surge current
0
100
200
300
400
500
600
700
800
900
1000
1100
1200
0
2
4
6
8
10
11
Rate of decay of on-state current, di/dt - (A/μs)
R
r
1
3
5
7
9
100
10
1
0.1
0.001
0.1
0.01
1.0
10
V
FGM
Lower Limit 1%
Upper Lmt 99%
T
j
= 25
C
V
GD
G
G
Gate trigger current, I
GT
- (A)
100W
50W
20W
10W
I
GD
I
FGM
Table gives pulse power P
GM
in Watts
Pulse Width
μs
100
200
500
1ms
10ms
50
150
150
150
150
20
100
150
150
150
100
-
400
150
125
100
25
-
Frequency Hz
10
1
0.1
0.01
0.001
Time - (s)
0.1
0.01
0.001
0.0001
T
C
Double side cooled
Anode side cooled
100
Conduction
d.c.
Halfwave
3 phase 120
6 phase 60
Effective thermal resistance
Junction to case
C/W
Double side
0.0065
0.0072
0.0073
0.0076
Anode side
0.0130
0.0137
0.0138
0.0141
0
20
40
60
80
100
120
140
160
180
200
P
0
5
10
15
20
25
30
35
40
45
50
I
2
t
2
s
6
)
1
10
Pulse length, half sine wave - (ms)
9
8
7
6
5
4
3
2
I
TSM
(V
R
= 0)
I
TSM
(V
R
= 50% V
RRM
)
I
2
t (V
R
= 0)
I
2
t (V
R
= 50% V
RRM
)
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