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參數(shù)資料
| 型號(hào)： | DCR5980A |
| 英文描述： | Phase Control Thyristors (SCR) - Disc / Puk Devices |
| 中文描述： | 相位控制晶閘管（可控硅） -光盤(pán)/北辰設(shè)備 |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大?。?/td> | 124K |
| 代理商： | DCR5980A |
DCR5980A
3/9
www.dynexsemi.com
Parameter
Surge (non-repetitive) on-state current
I
2
t for fusing
Surge (non-repetitive) on-state current
I
2
t for fusing
Test Conditions
10ms half sine, T
case
= 125C
V
R
= 50% V
RRM
- 1/4 sine
10ms half sine, T
case
= 125C
V
R
= 0
Symbol
I
TSM
I
2
t
I
TSM
I
2
t
SURGE RATINGS
Units
kA
A
2
s
kA
A
2
s
Max.
78.0
30.4 x 10
6
98.0
48 x 10
6
Parameter
Peak reverse and off-state current
Max. linear rate of rise of off-state voltage
Rate of rise of on-state current
Threshold voltage
On-state slope resistance
Delay time
Latching current
Holding current
Test Conditions
At V
RRM
/V
DRM
, T
case
= 125C
To 67% V
DRM
, T
j
= 125C
From 67% V
DRM
to 1100A
Repetitive 50Hz
Gate source 1A,
Non-repetitive
t
r
= 0.5
μ
s, T
j
= 125C
At T
vj
= 125C
At T
vj
= 125C
V
D
= 67% V
DRM
, gate source 20V, 10
t
r
= 0.5
μ
s, Tj = 25C
T
j
= 25C, V
D
= 5V
T
j
= 25C, V
G–K
=
∞
Symbol
I
RRM
/I
RRM
dV/dt
dI/dt
V
T(TO)
r
T
t
gd
I
L
I
H
DYNAMIC CHARACTERISTICS
Units
mA
V/
μ
s
A/
μ
s
A/
μ
s
V
m
μ
s
mA
mA
Max.
500
1000
250
500
0.77
0.05
1.5
750
200
Min.
-
-
-
-
-
-
1.0
150
40
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| DCR5980A12 | 制造商:n/a 功能描述:Power Semiconductor 制造商:Dynex Semiconductor 功能描述:SCR - PHASE CONTROL THYRISTOR |
| DCR5980A14 | 制造商:n/a 功能描述:Power Semiconductor 制造商:Dynex Semiconductor 功能描述:SCR - PHASE CONTROL THYRISTOR |
| DCR5980A16 | 制造商:n/a 功能描述:Power Semiconductor 制造商:Dynex Semiconductor 功能描述:SCR - PHASE CONTROL THYRISTOR |
| DCR5980A18 | 制造商:n/a 功能描述:Power Semiconductor 制造商:Dynex Semiconductor 功能描述:SCR - PHASE CONTROL THYRISTOR |
| DCR5980M18 | 制造商:Dynex Semiconductor 功能描述:SCR - PHASE CONTROL THYRISTOR |
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