參數(shù)資料
型號: DCR5980A
英文描述: Phase Control Thyristors (SCR) - Disc / Puk Devices
中文描述: 相位控制晶閘管(可控硅) -光盤/北辰設(shè)備
文件頁數(shù): 4/9頁
文件大?。?/td> 124K
代理商: DCR5980A
DCR5980A
4/9
www.dynexsemi.com
Parameter
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Test Conditions
V
DRM
= 5V, T
case
= 25
o
C
V
DRM
= 5V, T
case
= 25
o
C
At V
DRM
T
case
= 125
o
C
Anode positive with respect to cathode
Anode negative with respect to cathode
-
Anode positive with respect to cathode
See table, gate characteristics curve
-
Symbol
V
GT
I
GT
V
GD
V
FGM
V
FGN
V
RGM
I
FGM
P
GM
P
G(AV)
GATE TRIGGER CHARACTERISTICS AND RATINGS
Max.
3.5
500
0.25
30
0.25
5
30
150
10
Units
V
mA
V
V
V
V
A
W
W
Parameter
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Virtual junction temperature
Storage temperature range
Clamping force
Test Conditions
Double side cooled
DC
Single side cooled
Anode DC
Cathode DC
Clamping force 83.0kN
Double side
(with mounting compound)
Single side
On-state (conducting)
Reverse (blocking)
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
R
th(c-h)
T
vj
T
stg
F
m
Units
CW
CW
CW
CW
CW
C
C
C
kN
Max.
0.0065
0.013
0.013
0.001
0.002
135
125
125
91.0
Min.
-
-
-
-
-
-
-
–55
74.0
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