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參數(shù)資料
| 型號： | DBFS50R12KT320 |
| 英文描述： | IGBT Module |
| 中文描述： | IGBT模塊 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 186K |
| 代理商： | DBFS50R12KT320 |
vorlufige Daten
preliminary data
Technische Information / technical information
FS50R06YL4
IGBT-Module
IGBT-Modules
min.
typ.
max.
-
-
0,62
K/W
-
-
1,20
K/W
-
0,95
-
K/W
-
1,50
-
K/W
-
0,35
-
K/W
-
0,45
-
K/W
R
thCH
mm
mm
5,0
mm
5,0
terminal to heatsink
N
R
thJC
225
°C
Transistor Wechelr. / transistor inverter
12,0
Kriechstrecke
creepage distance
Anschluss - Anschluss
Luftstrecke
clearance distance
Anschluss - Anschluss
Anschluss - Kühlkrper
terminal to terminal
terminal to heatsink
maximum junction temperature
Hchstzulssige Sperrschichttemp.
operation temperature
Betriebstemperatur
λ
Paste
= 1 W / m*K /
λ
grease
= 1 W / m*K
Anschluss - Kühlkrper
Diode Wechselrichter / diode inverter
Transistor Wechelr. / transistor inverter
Diode Wechselrichter / diode inverter
Lagertemperatur
storage temperature
Transistor Wechelr. / transistor inverter
Diode Wechselrichter / diode inverter
λ
Paste
= 1 W / m*K /
λ
grease
= 1 W / m*K
übergangs-Wrmewiderstand, DC
thermal resistance, case to heatsink; DC
125
T
vjmax
T
op
-40
-
T
stg
-
-40
-
Innerer Wrmewiderstand; DC
thermal resistance, juncton to case; DC
°C
terminal to terminal
Al
2
O
3
mm
-
125
40..80
thermal resistance, junction to heatsink, DC
mW
150
-
20
K
°C
Thermische Eigenschaften / thermal properties
B-value
-
Verlustleistung
power dissipation
B-Wert
R
2
= R
1
exp[B(1/T
2
- 1/T
1
)]
B
25/50
-
%
k
-5
-
5
-
-
5
Charakteristische Werte / characteristic values
NTC-Widerstand / NTC-thermistor
Nennwiderstand
rated resistance
T
c
= 25°C
Wrmewiderstand; DC
Mechanische Eigenschaften / mechanical properties
G
Gewicht
weight
13,5
comperative tracking index
F
Anpresskraft pro Feder
mounting force per clamp
Abweichung von R
100
deviation of R
100
T
c
= 25°C
P
25
T
c
= 100°C, R
100
= 493
R/R
Innere Isolation
internal insulation
CTI
36
-
R
thJH
R
25
3375
g
3 (9)
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