參數(shù)資料
型號(hào)： DBFS50R12KT320
英文描述： IGBT Module
中文描述： IGBT模塊
文件頁(yè)數(shù)： 2/9頁(yè)
文件大?。?/td> 186K
代理商： DBFS50R12KT320
vorlufige Daten
preliminary data
Technische Information / technical information
FS50R06YL4
IGBT-Module
IGBT-Modules
min.
typ.
max.
-
42
-
ns
-
43
-
ns
-
11
-
ns
-
12
-
ns
-
120
-
ns
-
130
-
ns
-
20
-
ns
-
30
-
ns
-
1,25
1,7
V
-
1,20
-
V
-
88
-
A
-
94
-
A
-
3,2
-
μC
-
5,4
-
μC
-
1,05
-
mJ
-
1,50
-
mJ
Fallzeit (induktive Last)
fall time (inductive load)
Kurzschlussverhalten
SC data
t
P
≤
10μsec, V
GE
≤
15V, T
vj
= 125°C,
I
SC
Einschaltverlustenergie pro Puls
turn on energy loss per pulse
Ausschaltverlustenergie pro Puls
turn off energy loss per pulse
I
C
= 50A, V
CC
= 300V, V
GE
= 15V
R
G
= 3,3
, T
vj
= 125°C, L
σ
= 15nH
Sperrverzgerungsladung
recovered charge
I
F
= 50A, -di
F
/dt= 2600 A/μs
Q
r
E
rec
V
R
= 300V, V
GE
= -10V, T
vj
= 125°C
E
off
-
t
d,off
A
-
nH
stray inductance module
Modulinduktivitt
L
σ
CE
-
35
-
Diode Wechselrichter / diode inverter
Ausschaltenergie pro Puls
reverse recovery energy
V
R
= 300V, V
GE
= -10V, T
vj
= 25°C
V
R
= 300V, V
GE
= -10V, T
vj
= 125°C
I
F
= 50A, -di
F
/dt= 2600 A/μs
V
CC
=360V, V
CEmax
=V
CES
-L
σ
CE
·|di/dt|
-
4
-
-
-
R
CC′/EE′
225
V
GE
= ±15V, R
G
= 3,3
, T
vj
= 25°C
V
GE
= ±15V, R
G
= 3,3
, T
vj
= 125°C
-
E
on
V
GE
= ±15V, R
G
= 3,3
, T
vj
= 25°C
V
GE
= ±15V, R
G
= 3,3
, T
vj
= 125°C
t
f
I
C
= 50A, V
CC
= 300V, V
GE
= 15V
R
G
= 3,3
, T
vj
= 125°C, L
σ
= 15nH
m
Charakteristische Werte / characteristic values
I
C
= 50A, V
CC
= 300V
V
GE
= ±15V, R
G
= 3,3
, T
vj
= 25°C
V
GE
= ±15V, R
G
= 3,3
, T
vj
= 125°C
mJ
-
mJ
I
C
= 50A, V
CC
= 300V
0,5
V
R
= 300V, V
GE
= -10V, T
vj
= 125°C
V
F
forward voltage
Rückstromspitze
peak reverse recovery current
I
RM
V
R
= 300V, V
GE
= -10V, T
vj
= 25°C
I
F
= 50A, -di
F
/dt= 2600 A/μs
Charakteristische Werte / characteristic values
I
F
= 50A, V
GE
= 0V, T
vj
= 25°C
I
F
= 50A, V
GE
= 0V, T
vj
= 125°C
lead resistance, terminal-chip
Durchlassspannung
T
c
= 25°C
Leitungswiderstand, Anschluss-Chip
Abschaltverzgerungszeit (induktive Last)
turn off delay time (inductive load)
V
R
= 300V, V
GE
= -10V, T
vj
= 25°C
I
C
= 50A, V
CC
= 300V
Transistor Wechselrichter / transistor inverter
t
d,on
Anstiegszeit (induktive Last)
rise time (inductive load)
I
C
= 50A, V
CC
= 300V
t
r
Einschaltverzgerungszeit (induktive Last)
turn on delay time (inductive load)
V
GE
= ±15V, R
G
= 3,3
, T
vj
= 125°C
V
GE
= ±15V, R
G
= 3,3
, T
vj
= 25°C
1,35
2 (9)
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