- 您現在的位置：買賣IC網 > PDF目錄378529 > DBFP40R12KT320 IGBT Module PDF資料下載
參數資料
| 型號： | DBFP40R12KT320 |
| 英文描述： | IGBT Module |
| 中文描述： | IGBT模塊 |
| 文件頁數： | 2/10頁 |
| 文件大小： | 365K |
| 代理商： | DBFP40R12KT320 |
2
Technische Information / technical information
IGBT-Module
IGBT-modules
FP40R12KT3
prepared by: Andreas Schulz
approved by: Robert Severin
date of publication: 2003-7-8
revision: 2.0
Vorlufige Daten
preliminary data
Diode-Wechselrichter / diode-inverter
Hchstzulssige Werte / maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltage
TY = 25°C
V￠
1200
V
Dauergleichstrom
DC forward current
I
40
A
Periodischer Spitzenstrom
repetitive peak forward current
t = 1 ms
I￠
80
A
Grenzlastintegral
I2t - value
V = 0 V, t = 10 ms, TY = 125°C
I2t
320
A2s
Charakteristische Werte / characteristic values
Durchlassspannung
forward voltage
min.
typ.
max.
I = 40 A, V = 0 V, TY = 25°C
I = 40 A, V = 0 V, TY = 125°C
V
1,75
1,75
2,30
V
V
Rückstromspitze
peak reverse recovery current
I = 40 A, - di/dt = 1000 A/μs
V = 600 V, V = -15 V, TY = 25°C
V = 600 V, V = -15 V, TY = 125°C
I￠
45,0
46,0
A
A
Sperrverzgerungsladung
recovered charge
I = 40 A, -di/dt = 1000 A/μs
V = 600 V, V = -15 V, TY = 25°C
V = 600 V, V = -15 V, TY = 125°C
Q
4,40
8,40
μC
μC
Abschaltenergie pro Puls
reverse recovery energy
I = 40 A, -di/dt = 1000 A/μs
V = 600 V, V = -15 V, TY = 25°C
V = 600 V, V = -15 V, TY = 125°C
Etê
1,55
3,10
mJ
mJ
Innerer Wrmewiderstand
thermal resistance, junction to case
pro Diode
per diode
Rúì
0,95
K/W
Diode-Gleichrichter / diode-rectifier
Hchstzulssige Werte / maximum rated values
Periodische Rückw. Spitzensperrspannung
repetitive peak reverse voltage
TY = 25°C
V￠
1600
V
Durchlassstrom Grenzeffektivwert pro Dio.
forward current RMS maximum per diode
T = 80°C
I￠￠
50
A
Gleichrichter Ausgang Grenzeffektivstrom
maximum RMS current at Rectifier output
T = 80°C
I￠￠
60
A
Stostrom Grenzwert
surge forward current
t = 10 ms, TY = 25°C
t = 10 ms, TY = 150°C
I￠
315
260
A
A
Grenzlastintegral
I2t - value
t = 10 ms, TY = 25°C
t = 10 ms, TY = 150°C
I2t
500
340
A2s
A2s
Charakteristische Werte / characteristic values
Durchlassspannung
forward voltage
min.
typ.
max.
TY = 150°C, I = 40 A
V
1,20
V
Sperrstrom
reverse current
TY = 150°C, V = 1600 V
I
2,00
mA
Innerer Wrmewiderstand
thermal resistance, junction to case
pro Diode
per diode
Rúì
1,00
K/W
相關PDF資料 |
PDF描述 |
|---|---|
| DBFP40R12KT3G21 | IGBT Module |
| DBFP75R12KT320 | IGBT Module |
| DBFS300R12KE320 | IGBT Module |
| DBFS300R17KE320 | IGBT Module |
| DBFS30R06XL420 | IGBT Module |
相關代理商/技術參數 |
參數描述 |
|---|---|
| DBFT1-00-E1-EVAL-KT | 制造商:Advanced Micro Devices 功能描述:DEVELOPMENT BOARD FOR DB-FT1 制造商:Advanced Micro Devices 功能描述:E64 G-SERIES T56N DEVELOPMENT BOARD KIT - Boxed Product (Development Kits) |
| DBG | 制造商:Schneider Electric 功能描述:480/277V DIAGNOSTIC PCB - Bulk |
| DBG-102EF | 制造商:Alpha 3 Manufacturing 功能描述: |
| DBG-102LTF | 制造商:Alpha 3 Manufacturing 功能描述: |
| DBG-103EF | 制造商:Alpha 3 Manufacturing 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復。