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I
C, nom
I
C
300
500
A
A
min.
typ.
max.
-
1,7
2,15
V
-
2,0
t.b.d.
V
mA
5
-
-
Gateladung
gate charge
V
GE
= -15V...+15V
Eingangskapazitt
input capacitance
f= 1MHz, T
vj
= 25°C, V
CE
= 25V, V
GE
= 0V
V
GE
= 0V, T
vj
= 25°C, V
CE
= 600V
Q
G
I2t value
I
CES
collector emitter cut off current
I2t
C
res
Kollektor Emitter Reststrom
2,7
V
GE(th)
C
ies
nA
gate emitter leakage current
Gate Emitter Reststrom
V
CE
= 0V, V
GE
= 20V, T
vj
= 25°C
I
GES
-
-
-
400
6,5
-
-
-
V
0,85
-
nF
nF
21
-
μC
A
DC forward current
+/- 20
19
k A2s
t
p
= 1ms
I
FRM
600
A
Grenzlastintegral
600
Dauergleichstrom
I
F
300
T
c
= 25°C; Transistor
repetitive peak collector current
t
p
= 1ms, T
c
= 80°C
Periodischer Kollektor Spitzenstrom
kW
V
gate emitter peak voltage
T
c
= 25°C
DC collector current
reverse transfer capacitance
Rückwirkungskapazitt
f= 1MHz, T
vj
= 25°C, V
CE
= 25V, V
GE
= 0V
Hchstzulssige Werte / maximum rated values
Kollektor Emitter Sperrspannung
collector emitter voltage
T
c
= 80°C
Kollektor Dauergleichstrom
T
vj
= 25° C
1200
V
Elektrische Eigenschaften / electrical properties
I
C
= 300A, V
GE
= 15V, T
vj
= 125°C
Gate Schwellenspannung
gate threshold voltage
I
C
= 12mA, V
CE
= V
GE
, T
vj
= 25°C
Periodischer Spitzenstrom
repetitive peak forward current
Gesamt Verlustleistung
total power dissipation
Gate Emitter Spitzenspannung
V
CEsat
Charakteristische Werte / characteristic values
approved: SM TM; Wilhelm Rusche
V
R
= 0V, t
p
= 10ms, T
vj
= 125°C
Technische Information / technical information
FS300R12KE3
IGBT-Module
IGBT-Modules
vorlufige Daten
preliminary data
V
CES
A
Isolations Prüfspannung
insulation test voltage
RMS, f= 50Hz, t= 1min.
V
ISOL
I
CRM
P
tot
1,45
kV
2,5
5,0
5,8
Transistor Wechselrichter / transistor inverter
date of publication: 2002-10-28
Kollektor Emitter Sttigungsspannung
collector emitter saturation voltage
I
C
= 300A, V
GE
= 15V, T
vj
= 25°C
V
GES
revision: 2.0
prepared by: MOD-D2; Mark Münzer
1 (8)
DB_FS300R12KE3_2.0
2002-10-28