參數(shù)資料
型號： DBFS300R17KE320
英文描述： IGBT Module
中文描述： IGBT模塊
文件頁數(shù)： 2/8頁
文件大小： 302K
代理商： DBFS300R17KE320
Technische Information / technical information
FS300R12KE3
IGBT-Module
IGBT-Modules
vorlufige Daten
preliminary data
min.
typ.
max.
-
0,25
-
μs
-
0,30
-
μs
-
0,09
-
μs
-
0,10
-
μs
-
0,55
-
μs
-
0,65
-
μs
-
0,13
-
μs
-
0,16
-
μs
-
1,65
2,15
V
-
1,65
t.b.d.
V
-
210
-
A
-
270
-
A
-
30
-
μC
-
57
-
μC
-
14
-
mJ
-
26
-
mJ
Fallzeit (induktive Last)
fall time (inductive load)
V
GE
= ±15V, R
G
= 2,4
, T
vj
= 25°C
V
GE
= ±15V, R
G
= 2,4
, T
vj
= 125°C
I
C
= 300A, V
CC
= 600V
Sperrverzgerungsladung
recovered charge
I
F
= 300A, -di
F
/dt= 3500A/μs
Kurzschlussverhalten
SC data
t
P
≤
10μs, V
GE
≤
15V, T
Vj
≤
125°C
I
SC
-
1200
-
A
V
CC
= 900V, V
CEmax
= V
CES
- L
σ
CE
·di/dt
Einschaltverlustenergie pro Puls
turn on energy loss per pulse
Ausschaltverlustenergie pro Puls
turn off energy loss per pulse
-
nH
stray inductance module
Modulinduktivitt
L
σ
CE
-
Diode Wechselrichter / diode inverter
Ausschaltenergie pro Puls
reverse recovery energy
I
F
= 300A, -di
F
/dt= 3500A/μs
V
R
= 600V, V
GE
= -15V, T
vj
= 125°C
forward voltage
Q
r
E
rec
R
CC′/EE′
T
c
= 25°C
20
E
off
I
C
= 300A, V
CC
= 600V, L
σ
= 80nH
V
GE
= ±15V, R
G
= 2,4
, T
vj
= 125°C
-
43
1,1
-
mJ
-
mJ
E
on
I
C
= 300A, V
CC
= 600V, L
σ
= 80nH
V
GE
= ±15V, R
G
= 2,4
, T
vj
= 125°C
I
C
= 300A, V
CC
= 600V
t
d,off
V
GE
= ±15V, R
G
= 2,4
, T
vj
= 25°C
V
GE
= ±15V, R
G
= 2,4
, T
vj
= 125°C
m
Charakteristische Werte / characteristic values
I
C
= 300A, V
CC
= 600V
V
GE
= ±15V, R
G
= 2,4
, T
vj
= 25°C
V
GE
= ±15V, R
G
= 2,4
, T
vj
= 125°C
-
-
t
f
V
GE
= ±15V, R
G
= 2,4
, T
vj
= 25°C
V
GE
= ±15V, R
G
= 2,4
, T
vj
= 125°C
-
22
I
RM
Charakteristische Werte / characteristic values
I
F
= 300A, V
GE
= 0V, T
vj
= 25°C
I
F
= 300A, V
GE
= 0V, T
vj
= 125°C
V
F
Einschaltverzgerungszeit (induktive Last)
turn on delay time (inductive load)
Abschaltverzgerungszeit (induktive Last)
turn off delay time (inductive load)
V
R
= 600V, V
GE
= -15V, T
vj
= 25°C
V
R
= 600V, V
GE
= -15V, T
vj
= 125°C
Rückstromspitze
peak reverse recovery current
Leitungswiderstand, Anschluss-Chip
lead resistance, terminal-chip
V
R
= 600V, V
GE
= -15V, T
vj
= 125°C
Transistor Wechselrichter / transistor inverter
t
d,on
Anstiegszeit (induktive Last)
rise time (inductive load)
I
C
= 300A, V
CC
= 600V
t
r
V
R
= 600V, V
GE
= -15V, T
vj
= 25°C
I
F
= 300A, -di
F
/dt= 3500A/μs
Durchlassspannung
V
R
= 600V, V
GE
= -15V, T
vj
= 25°C
2 (8)
DB_FS300R12KE3_2.0
2002-10-28
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