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參數(shù)資料
| 型號： | DBF450R12KS420 |
| 英文描述： | IGBT Module |
| 中文描述： | IGBT模塊 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 255K |
| 代理商： | DBF450R12KS420 |
2
Technische Information / technical information
F4-50R12KS4
IGBT-Module
IGBT-modules
prepared by: Martin Knecht
approved by: Robert Severin
date of publication: 2003-9-24
revision: 2.0
Vorlufige Daten
preliminary data
Diode-Wechselrichter / diode-inverter
Hchstzulssige Werte / maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltage
TY = 25°C
V￠
1200
V
Dauergleichstrom
DC forward current
I
50
A
Periodischer Spitzenstrom
repetitive peak forward current
t = 1 ms
I￠
100
A
Grenzlastintegral
I2t - value
V = 0 V, t = 10 ms, TY = 125°C
I2t
1250
A2s
Charakteristische Werte / characteristic values
min.
typ.
2,00
1,70
max.
2,55
Durchlassspannung
forward voltage
I = 50 A, V = 0 V, TY = 25°C
I = 50 A, V = 0 V, TY = 125°C
V
V
V
Rückstromspitze
peak reverse recovery current
I = 50 A, - di/dt = 1300 A/μs
V = 600 V, V = -15 V, TY = 25°C
V = 600 V, V = -15 V, TY = 125°C
I￠
28,0
41,0
A
A
Sperrverzgerungsladung
recovered charge
I = 50 A, -di/dt = 1300 A/μs
V = 600 V, V = -15 V, TY = 25°C
V = 600 V, V = -15 V, TY = 125°C
Q
3,00
8,50
μC
μC
Abschaltenergie pro Puls
reverse recovery energy
I = 50 A, -di/dt = 1300 A/μs
V = 600 V, V = -15 V, TY = 25°C
V = 600 V, V = -15 V, TY = 125°C
Etê
1,10
3,10
mJ
mJ
Innerer Wrmewiderstand
thermal resistance, junction to case
pro Diode
per diode
Rúì
0,70
K/W
NTC-Widerstand / NTC-thermistor
Charakteristische Werte / characteristic values
min.
typ.
max.
Nennwiderstand
rated resistance
T = 25°C
Rè
5,00
k
Abweichung von R
deviation of R
T = 100°C, R = 493
R/R
-5
5
%
Verlustleistung
power dissipation
T = 25°C
Pè
20,0
mW
B-Wert
B-value
Rè = Rè exp [Bè(1/Tè - 1/(298,15 K))]
Bè
3375
K
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