- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄379122 > DBF475R12KS420 IGBT Module PDF資料下載
參數(shù)資料
| 型號： | DBF475R12KS420 |
| 英文描述： | IGBT Module |
| 中文描述： | IGBT模塊 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 255K |
| 代理商： | DBF475R12KS420 |
1
Technische Information / technical information
F4-75R12KS4
IGBT-Module
IGBT-modules
prepared by: Martin Knecht
approved by: Robert Severin
date of publication: 2003-9-24
revision: 2.0
Vorlufige Daten
preliminary data
IGBT-Wechselrichter / IGBT-inverter
Hchstzulssige Werte / maximum rated values
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
TY = 25°C
V
1200
V
Kollektor-Dauergleichstrom
DC-collector current
T = 65°C
T = 25°C
I òó
I
75
100
A
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t = 1 ms, T = 65°C
I￠
150
A
Gesamt-Verlustleistung
total power dissipation
T = 25°C
Púóú
500
W
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
+/-20
V
Charakteristische Werte / characteristic values
min.
typ.
max.
Kollektor-Emitter Sttigungsspannung
collector-emitter saturation voltage
I = 75 A, V = 15 V, TY = 25°C
I = 75 A, V = 15 V, TY = 125°C
V ùèú
3,20
3,85
3,75
V
V
Gate-Schwellenspannung
gate threshold voltage
I = 3,00 mA, V = V, TY = 25°C
Vúì
4,5
5,5
6,5
V
Gateladung
gate charge
V = -15 V ... +15 V
Q
0,80
μC
Interner Gatewiderstand
internal gate resistor
TY = 25°C
Ríòú
5,0
Eingangskapazitt
input capacitance
f = 1 MHz, TY = 25°C, V = 25 V, V = 0 V
Cítù
5,10
nF
Rückwirkungskapazitt
reverse transfer capacitance
f = 1 MHz, TY = 25°C, V = 25 V, V = 0 V
Ctù
0,30
nF
Kollektor-Emitter Reststrom
collector-emitter cut-off current
V = 1200 V, V = 0 V, TY = 25°C
I
5,0
mA
Gate-Emitter Reststrom
gate-emitter leakage current
V = 0 V, V = 20 V, TY = 25°C
I
400
nA
Einschaltverzgerungszeit (ind. Last)
turn-on delay time (inductive load)
I = 75 A, V = 600 V
V = ±15 V, Róò = 7,5 , TY = 25°C
V = ±15 V, Róò = 7,5 , TY = 125°C
tá óò
0,12
0,13
μs
μs
Anstiegszeit (induktive Last)
rise time (inductive load)
I = 75 A, V = 600 V
V = ±15 V, Róò = 7,5 , TY = 25°C
V = ±15 V, Róò = 7,5 , TY = 125°C
t
0,05
0,06
μs
μs
Abschaltverzgerungszeit (ind. Last)
turn-off delay time (inductive load)
I = 75 A, V = 600 V
V = ±15 V, Ró = 7,5 , TY = 25°C
V = ±15 V, Ró = 7,5 , TY = 125°C
tá ó
0,31
0,36
μs
μs
Fallzeit (induktive Last)
fall time (inductive load)
I = 75 A, V = 600 V
V = ±15 V, Ró = 7,5 , TY = 25°C
V = ±15 V, Ró = 7,5 , TY = 125°C
t
0,02
0,03
μs
μs
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
I = 75 A, V = 600 V, L = 30 nH
V = ±15 V, Róò = 7,5 , TY = 25°C
V = ±15 V, Róò = 7,5 , TY = 125°C
Eóò
9,00
mJ
mJ
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
I = 75 A, V = 600 V, L = 30 nH
V = ±15 V, Ró = 7,5 , TY = 25°C
V = ±15 V, Ró = 7,5 , TY = 125°C
Eó
3,80
mJ
mJ
Kurzschluverhalten
SC data
t ù 10 μs, V ù 15 V
TYù125°C, V = 900 V, Vèà = V -Lù ·di/dt
I
450
A
Innerer Wrmewiderstand
thermal resistance, junction to case
pro IGBT
per IGBT
Rúì
0,25
K/W
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DBFF300R12KE330 | IGBT Module |
| DBFF300R12KS421 | IGBT Module |
| DBFF300R17KE320 | IGBT Module |
| DBI15-04 | Three-Phase Si-Bridge Rectifiers |
| DBI15-06 | Three-Phase Si-Bridge Rectifiers |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DBF50180WZ20236BK1 | 制造商:Vishay Sprague 功能描述:DBF050180 40KVP 2000PF ?10% R230 5137 - Bulk |
| DBF5W5PA00LF | 功能描述:D-Sub混合觸點連接器 DSUB PWR STB 5W5 PIN RoHS:否 制造商:FCI 觸點布置: 位置/觸點數(shù)量: 安裝風(fēng)格:Through Hole 安裝角: 端接類型:Solder |
| DBF5W5SA00LF | 功能描述:D-Sub混合觸點連接器 DSUB PWR STB 5W5 SKT RoHS:否 制造商:FCI 觸點布置: 位置/觸點數(shù)量: 安裝風(fēng)格:Through Hole 安裝角: 端接類型:Solder |
| DBF60 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:6.0A Single-Phase Bridge Rectifier |
| DBF60_09 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:6.0A Single-Phase Bridge Rectifier |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。